In situ tension specimen for mechanical performance testing of TSV (Through Silicon Vias) copper interconnection material

Abstract

The invention discloses an in situ tension specimen for mechanical performance testing of a TSV (Through Silicon Vias) copper interconnection material. The in situ tension specimen comprises a specimen part and a clamping part used for clamping a specimen, wherein the specimen part is a circular metal column formed in a silicon via; the clamping part comprises an upper clamping end and a lower clamping end which are of a square flat structure; and the specimen part is clamped between the upper clamping end and the lower clamping end. Compared with the traditional micro-tension specimen at home and abroad, the in situ tension specimen has a stress direction which is consistent with a growth direction of the circular metal column, has a micron-order main size, realizes the mechanical performance testing of an in situ TSV copper column, and can effectively solve the problem that mechanical performance testing data of a film layer can not actually reflect mechanical performance of the copper interconnection material in the TSV, thus the actuality of the mechanical characteristic parameter of the copper interconnection material in the TSV during 3D package design and analogue simulation is improved.

Description

technical field [0001] The invention relates to a tensile sample for testing technology, in particular to an in-situ tensile sample for testing the mechanical properties of TSV copper interconnection materials. Background technique [0002] TSV (Through Silicon Vias, through-silicon vias) stacked interconnection technology can not only improve three-dimensional integration, but also reduce interconnection delay due to its advantages of short-distance interconnection, which is an important direction for the development of microelectronics technology. Since the copper interconnection material in TSV has different preparation process and structure size from the macroscopic bulk copper material, the basic mechanical properties such as tensile strength and Young's modulus of the material are significantly different from those of the macroscopic material. [0003] Most of the existing film mechanical performance tests are based on the nano-indentation method and the film uniaxial ...

AI Technical Summary

Problems solved by technology

"However, the stretching direction of the film uniaxial stretching method is different from the growth direction of the electroplating layer, and the in-situ mechanical property parameters of the TSV copper material cannot be obtained.

In the absence of detailed micro-scale and in-situ mechanical property parameters of copper materials, the design and simulation of copper TSV structures must refer to the mechanical parameters of macroscopic bulk copper materials, so that the design of TSV copper interconnection structures has certain reliability. problems that hinder the process of industrialization

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