The invention discloses a low-cost tunable DFB
semiconductor laser device of an integrated modulator. The tunable DFB
semiconductor laser device is manufactured with the reconstruction-equivalent chirped technology, multiple DFB
semiconductor laser devices share one modulator, and the tunable
wavelength range can be expanded by increasing the number of laser devices or adopting the active and passive integration method. The integrated modulator is an semiconductor
optical amplifier modulator (SOA), or an electric absorption modulator (EAM), or a Mach-Zehnder modulator (MZM) and can be realized by means of the
quantum well intermixing technology (QWI), the Butt-joint growth technology or the selective area growth technology (SAG), and
quantum well materials are based on the InP / InGaAsP or InP / AlGaInAs
material system. Due to the fact that only one
radio frequency port is needed for modulation at least, cost can be reduced by simplifying
package design, and practicality and
usability are improved greatly.