The invention discloses a low-cost tunable DFB 
semiconductor laser device of an integrated modulator. The tunable DFB 
semiconductor laser device is manufactured with the reconstruction-equivalent chirped technology, multiple DFB 
semiconductor laser devices share one modulator, and the tunable 
wavelength range can be expanded by increasing the number of laser devices or adopting the active and passive integration method. The integrated modulator is an semiconductor 
optical amplifier modulator (SOA), or an electric absorption modulator (EAM), or a Mach-Zehnder modulator (MZM) and can be realized by means of the 
quantum well intermixing technology (QWI), the Butt-joint growth technology or the selective area growth technology (SAG), and 
quantum well materials are based on the InP / InGaAsP or InP / AlGaInAs 
material system. Due to the fact that only one 
radio frequency port is needed for modulation at least, cost can be reduced by simplifying 
package design, and practicality and 
usability are improved greatly.