Unlock instant, AI-driven research and patent intelligence for your innovation.

HV semiconductor device using floating conductors

A semiconductor and device technology, applied in the field of HV interconnect solutions, can solve the problems of difficulty in increasing the breakdown voltage, affecting the reliability of UHVMOS devices, and limiting the application of UHVMOS devices.

Active Publication Date: 2015-02-11
TAIWAN SEMICON MFG CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A common problem found in UHV MOS devices is that it is difficult to increase the breakdown voltage
This not only limits the application of UHV MOS devices, but also adversely affects the reliability of UHV MOS devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • HV semiconductor device using floating conductors
  • HV semiconductor device using floating conductors
  • HV semiconductor device using floating conductors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The making and using of preferred embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the disclosure.

[0032] A novel high voltage interconnection structure is provided according to an embodiment. Variations and operation of the embodiments are then discussed. Like reference numerals are used to designate like elements throughout the various views and illustrative embodiments.

[0033] figure 1 An ultra high voltage (UHV) generating circuit 10 is shown for generating ultra high voltage, which may be around 600V or even above 600V, although the ultra high voltage may be lower as well. UHV generation circuit 10 includes UHV MOS devices 20 (indicated as 20A and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A device includes a first and a second heavily doped region in a semiconductor substrate. An insulation region has at least a portion in the semiconductor substrate, wherein the insulation region is adjacent to the first and the second heavily doped regions. A gate dielectric is formed over the semiconductor substrate and having a portion over a portion of the insulation region. A gate is formed over the gate dielectric. A floating conductor is over and vertically overlapping the insulation region. A metal line includes a portion over and vertically overlapping the floating conductor, wherein the metal line is coupled to, and carries a voltage of, the second heavily doped region.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, the present invention relates to a HV interconnection solution using floating conductors. Background technique [0002] Ultra high voltage (UHV) metal oxide semiconductor (MOS) devices are typically fabricated with coplanar drain and source regions. A common problem found in UHV MOS devices is that it is difficult to increase the breakdown voltage. This not only limits the application of UHV MOS devices, but also adversely affects the reliability of UHV MOS devices. [0003] In one application of UHV MOS devices, UHV MOS devices are used to form level shifters that generate high voltages. For example, a high voltage can be supplied to a high-side gate driver, which can operate in a pressure range between 0 and 600V. Therefore, a level shifter needs to generate voltages as high as 600V by boosting a low source voltage (eg 5V). In this circuit, the breakdown voltage of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/417H01L29/41
CPCH01L29/0692H01L29/7816H01L29/861H01L29/42368H01L27/088H01L29/0696H01L29/404H01L29/4238H01L29/7835
Inventor 苏如意杨富智蔡俊琳霍克孝郑志昌柳瑞兴
Owner TAIWAN SEMICON MFG CO LTD