Memory cell of resistor type random access memory and preparation method thereof

A technology of random access memory and storage unit, applied in the direction of electrical components, etc., can solve the problems of anti-fatigue type deterioration, energy consumption of storage unit, poor consistency, etc.

Active Publication Date: 2012-08-01
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the erasing operation current is generally greater than the writing current, resulting in higher operating power; in the interleaved array, diode or triode rectification is required to avoid interference and misreading, which increases the complexity of the device structure and consumes additional energy ; The biggest problem is that the existing materials have poor consistency, that is, there is a certain divergence in the voltage of each operation, so a large voltage is required to ensure the success of each operation during pulse operation; and such a large voltage will make the storage The unit consumes unnecessary energy and accelerates the aging of the device, thereby making it less resistant to fatigue

Method used

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  • Memory cell of resistor type random access memory and preparation method thereof
  • Memory cell of resistor type random access memory and preparation method thereof
  • Memory cell of resistor type random access memory and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] In this embodiment, the storage unit of the resistive random access memory uses a silicon wafer as an insulating substrate, a platinum electrode is arranged on the surface of the insulating substrate as the first electrode, an intermediate layer is arranged on the surface of the first electrode, and platinum is arranged on the surface of the intermediate layer as the second electrode . Wherein, the middle layer is formed by a poly-Scheffer base film doped with p-toluenesulfonic acid, and its structural formula is:

[0056]

[0057] The preparation method of the storage unit of the above-mentioned resistance random access memory is as follows:

[0058] Step 1: patterning and depositing platinum on the surface of the silicon wafer to obtain a patterned platinum-coated silicon wafer;

[0059] Step 2: dissolving polyschiff base in N,N-dimethylacetamide, making it a solution A whose mass percent concentration of polyschiff base is 4%; Two times the amount of p-toluenesu...

Embodiment 2

[0075] In this embodiment, the storage unit of the resistive random access memory uses polyimide as an insulating substrate, a gold electrode is arranged on the surface of the insulating substrate as the first electrode, an intermediate layer is arranged on the surface of the first electrode, and aluminum is arranged on the surface of the intermediate layer as the second electrode. two electrodes. Wherein, the middle layer is formed by poly-Scheffer base film doped with trifluoroacetic acid, and its structural formula is:

[0076] The preparation method of the storage unit of the above-mentioned resistance random access memory is as follows:

[0077] Step 1: Deposit gold in a patterned manner on the surface of the polyimide film to obtain a patterned gold-plated flexible substrate;

[0078] Step 2: dissolving polyschiff base in N,N-dimethylacetamide, making it a solution A whose mass percent concentration of polyschiff base is 4%; Two times the amount of p-toluenesulfonic ...

Embodiment 3

[0093] In this embodiment, the storage unit of the resistive random access memory uses polyester as an insulating substrate, a silver electrode is arranged on the surface of the insulating substrate as the first electrode, an intermediate layer is arranged on the surface of the first electrode, and gold is arranged on the surface of the intermediate layer as the second electrode . Wherein, the middle layer is formed by hydrochloric acid-doped poly-Schever base film, and its structural formula is:

[0094]

[0095] The preparation method of the storage unit of the above-mentioned resistance random access memory is as follows:

[0096] Step 1: Deposit silver in a patterned manner on the surface of the polyester film to obtain a patterned silver-plated substrate;

[0097]Step 2: dissolving polyschiff base in N,N-dimethylacetamide, making polyschiff base mass percent concentration is 4% solution A; Two times the amount of p-toluenesulfonic acid was dissolved in N,N-dimethylac...

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Abstract

The invention discloses a memory cell of a resistor type random access memory, which comprises an insulation substrate, a first electrode, an intermediate layer and a second electrode, wherein the first electrode is arranged on the surface of the insulation substrate, the intermediate layer is arranged on the surface of the first electrode, and the second electrode is arranged on the intermediate layer. The intermediate layer consists of a poly Schiff base film doped with protonic acid, wherein the poly Schiff base film is formed by doping protonic acid on nitrogen atoms of imine double bond (C=N) in the poly Schiff base. Compared with a memory cell with common poly Schiff base serving as the intermediate layer, power consumption of the memory cell with the poly Schiff base film doped with protonic acid as the intermediate layer can be reduced effectively, self-rectifying of the memory cell is realized, resistance change of the memory cell is slow without sudden change, better uniformity of resistance change can be achieved and the memory cell has potential application value in the field of memory devices.

Description

technical field [0001] The invention relates to the technical field of polymers and memories, in particular to a storage unit of a resistance random access memory and a preparation method thereof. Background technique [0002] The rapid development of digital high-tech has put forward higher requirements for the performance of existing information storage products, such as high speed, high density, long life, low cost and low power consumption, etc. Defects. One of the weaknesses of dynamic memory and static memory is its volatility, that is, the loss of information in the event of power failure, and its susceptibility to electromagnetic radiation interference. Flash memory has technical obstacles such as slow read and write speeds and low recording density. Therefore, there is an urgent need to make breakthroughs in storage materials and technologies, and to develop storage products with high performance to meet the development requirements of the digital high-tech era. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C08L79/00
Inventor 李润伟胡本林潘亮尚杰
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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