Performance degradation testing method of insulated gate bipolar transistor

Abstract

The invention belongs to the technical field of testing and relates to a performance degradation testing method of an insulated gate bipolar transistor. According to the method, the insulated gate bipolar transistor is taken as an object, a programmable pulse generator, a programmable electronic switch, a programmable digital universal meter, a power resistor, a working resistor and a direct current power supply are utilized, and offset values of conduction saturation voltage of the insulated gate bipolar transistor along with the impact number of times of short-circuit current under different short-circuit current values can be obtained through short-circuit current impact and further used as performance degradation data of the insulated gate bipolar transistor. According to the method, the accurate performance degradation data of the insulated gate bipolar transistor caused by short-circuit current can be obtained within a short period of time, and the data can be utilized for accurately predicting the failure time of the insulated gate bipolar transistor in the using process so as to take measures in time before the failure of the insulated gate bipolar transistor, prevent serious faults caused by the failure of the insulated gate bipolar transistor and further reduce the economic loss.

Description

technical field [0001] The invention belongs to the technical field of testing and relates to a performance degradation test method of an insulated gate bipolar transistor. Background technique [0002] The insulated gate bipolar transistor (Insulated Gated Bipolar Transistor, IGBT), is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOS). The advantages of high input impedance and low conduction voltage drop. In view of the above characteristics of IGBT, IGBT is unmatched by other power devices in terms of high voltage, high current and high speed, so it is an ideal switching device in the field of power electronics, and is often used in AC motors, frequency converters, switching power supplies, lighting circuits, traction drives etc. [0003] However, in practical applications, IGBTs are often subject to overvoltage shocks, short-circuit current shocks, thermal st...

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Problems solved by technology

[0003] However, in practical applications, IGBTs are often subject to overvoltage shocks, short-circuit current shocks, thermal stress cycles, and performance degradation due to static electricity, which eventually leads to device failure.

When the IGBT has a short-circuit current impact, the internal electric field of the IGBT is redistributed, causing serious degradation of the IGBT carrier mobility, resultin

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