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Monolithic integrated sensor device, method of forming and method of forming its cavity structure

A sensor device, monolithic integration technology, applied in the field of micro-electromechanical system devices

Active Publication Date: 2015-12-02
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are still defects and deficiencies in this process, and there is still room for improvement

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  • Monolithic integrated sensor device, method of forming and method of forming its cavity structure
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  • Monolithic integrated sensor device, method of forming and method of forming its cavity structure

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Embodiment Construction

[0016] Embodiments relate to MEMS devices, particularly MEMS devices with associated electronics integrated on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling the use of novel cavity sealing processes. The impact and potentially harmful effects on the electronic device due to MEMS processing are thus reduced or eliminated. At the same time, a highly flexible solution is available, capable of implementing various measurement principles, including capacitive and piezoresistive. As a result, various sensor applications can have improved performance and quality while remaining cost efficient.

[0017] FIG. 1 illustrates fabrication steps of a capacitive MEMS device 100 with a localized sacrificial layer (eg, oxide). Figure 1A A silicon substrate 102 is shown with an implanted layer 104 . In one embodiment, substrate 102 is a p-type substrate and layer 104 is an n-type implanted layer, forming a pn junction. A patte...

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Abstract

Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.

Description

technical field [0001] The present invention relates generally to microelectromechanical systems (MEMS) devices, and more particularly, to MEMS devices and electrical devices on a single wafer. Background technique [0002] MEMS devices, such as sensors, and associated electronics, such as application-specific integrated circuits (ASICs), are typically provided on separate chips because the manufacturing processes for the two are incompatible with each other. For example, in modern CMOS technology it is critical to avoid high temperatures to protect doping profiles, whereas in the fabrication of electronic devices high temperature steps may be required. The two-chip solution has many disadvantages, such as more complex and expensive packaging, and the inability to implement applications that require processing of very small signals. [0003] A so-called "MEMSfirst" process has recently been developed for integrating MEMS with electronics on a single chip. However, there ar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/00H10N39/00
CPCB81B7/008B81B2201/0264B81B2203/0315B81B2207/015B81C1/00246B81C2203/0707B81C2203/0735B81C2203/0771H01L27/0611B81C2203/0714B81C1/00158
Inventor 斯特凡·科尔贝克莱门斯·普鲁格尔伯恩哈德·温克勒安德烈亚斯·桑克尔
Owner INFINEON TECH AG