Piezoresistive force sensing device based on Josephson effect
A piezoresistive device technology, applied in the field of piezoresistive force-sensitive devices, can solve the problems of small range, narrow bandwidth, and low detection sensitivity, and achieve the effect of detailed and reliable data and convenient detection
Active Publication Date: 2013-10-30
ZHONGBEI UNIV
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[0004] In order to solve the problems of low detection sensitivity, narrow bandwidth, and small range of traditional sensors, the present invention adopts an integrated structure and method of Josephson junctions and piezoresistive devices to improve the detection sensitivity of piezoresistive devices at microscale and realize broadband Wide, large range, high overload, high sensitivity performance
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[0028] The present invention will be further described below in conjunction with accompanying drawing:
[0029] figure 1 Shown is the overall structure diagram of the detection principle. One end of the fixed base 1 is connected to the root of the cantilever beam 2. The area adjacent to the root of the cantilever beam 2 is doped with piezoresistors 5 and 6. The fixed base 1 is adjacent to the cantilever beam 2. The area of the junction is doped with piezoresistors 4, 7, and the upper area of piezoresistors 4, 7 is fabricated with a Josephson device 3.
[0030] The varistors 4, 5, 6, and 7 have the same structural size and the same doping concentration, that is, the same resistance value.
[0031] The piezoresistors 5 and 6 are located at the root of the cantilever beam 2, that is, the most obvious area where the cantilever beam 2 produces strain. The piezoresistors 4, 7 and the Josephson device 3 are fabricated at any position on the fixed base 1, that is, pressure sensit...
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A piezoresistive force sensing device based on a Josephson effect mainly comprises a fixing base, a cantilever beam, a Josephson device, piezoresistors, a frequency detecting circuit and a spectrum analyzer. One end of the cantilever beam is connected with the fixing base, the piezoresistors are doped at the root of the cantilever beam and in an area of the fixing base near the joint of the cantilever beam, and the Josephson device is manufactured on the fixing base and consists of a silicon substrate layer, a silicon dioxide layer, a lead layer, a lead oxide layer, a copper layer and a lead layer. According to a detection method, the ultra-sensitivity of a Josephson junction to voltage is applied to detecting voltage signals of the piezoresistive device, direct-current energy signals are converted into alternating-current energy signals, tiny voltage signals can be detected by detecting the frequency of the alternating-current energy signals, resolution of the detection method can be increased by 2-3 orders of magnitude compared with that of the traditional piezoresistive signal detection method, detection is convenient, data are full, accurate and reliable, and the piezoresistive voltage signal detection method is quite novel.
Description
technical field [0001] The invention relates to a piezoresistive force-sensitive device based on the Josephson effect, which belongs to the technical field of micromechanical electronics. Background technique [0002] The piezoresistive sensor is realized by using the piezoresistive effect of single crystal silicon material. When the force acts on the silicon crystal, the lattice of the crystal is deformed, causing the carriers to scatter from one energy level to another, causing the mobility of the carriers to change, and disturbing the average of the longitudinal and lateral directions of the carriers. amount, thereby changing the resistivity of silicon. Since the variation of piezoresistor is proportional to strain, piezoresistors are generally arranged on the surface of flexible structures to obtain greater deformation. Since the change in piezoresistive resistance is small, an additional bridge circuit is required to measure small relative changes in resistance. Acco...
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IPC IPC(8): G01L1/18
Inventor 李孟委王莉杜康刘俊李锡广朱京
Owner ZHONGBEI UNIV