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Prevents cracking of passivation layers on ultra-thick metals

A technology of ultra-thick metal and metal layers, applied in electrical components, electrical solid-state devices, circuits, etc., to solve problems such as increased production costs and reduced yields

Active Publication Date: 2016-08-31
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method leads to an increase in production cost and a decrease in yield

Method used

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  • Prevents cracking of passivation layers on ultra-thick metals
  • Prevents cracking of passivation layers on ultra-thick metals
  • Prevents cracking of passivation layers on ultra-thick metals

Examples

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Embodiment Construction

[0028] The making and using of preferred embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the disclosure.

[0029] According to embodiments, an integrated circuit device including an ultra-thick metal line (UTM) and a method of forming the same are provided. Intermediate stages in the fabrication of an embodiment are shown. Variations of the examples are discussed. Throughout the various figures and illustrated embodiments, the same reference numerals are used to refer to the same elements.

[0030] refer to figure 1 , provided wafer 2. Wafer 2 includes a substrate 10 . In an embodiment, substrate 10 is a semiconductor substrate, such as a silicon substrate, although ...

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Abstract

The device includes a top metal layer; a UTM line over the top metal layer and having a first thickness; a passivation layer over the UTM line and having a second thickness. A ratio of the second thickness to the first thickness is less than about 0.33.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, the present invention relates to preventing cracking of a passivation layer on an ultra-thick metal. Background technique [0002] In order to reduce the resistance of metal lines, ultra-thick metal (UTM) lines are formed on integrated circuits. Due to the reduction in resistance, the performance of integrated circuit devices such as inductors can be improved to meet the needs of certain performance demanding circuits such as mixed signal circuits, analog circuits, and radio frequency (RF) circuits. [0003] UTM lines can be covered with a passivation layer. However, due to the significant thickness of the UTM wire, and further due to the mismatch in the coefficients of thermal expansion (CTEs) of the UTM wire and the passivation layer, the passivation layer can crack when it is subjected to thermal cycling. Cracks may also propagate from the passivation layer to the unde...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/532H01L23/522
CPCH01L21/76832H01L21/76834H01L23/5227H01L23/5283H01L2224/13H01L2924/10158H01L21/76885
Inventor 陈郁文谢宗翰林坤佑蔡冠智
Owner TAIWAN SEMICON MFG CO LTD