Novel stress sensor based on magnetoresistance effect

Abstract

The invention relates to a novel stress sensor based on a magnetoresistance effect. The technical scheme is as follows: an upper layer of the novel stress sensor is an upper ferromagnetic layer; a middle layer is a non-ferromagnetic layer; a lower layer is a lower ferromagnetic layer; a packing layer packs the upper layer, the middle layer and the lower layer; a wire is connected with the upper ferromagnetic layer after passing through the packing layer; the other end of the wire is connected in series to an indicator light, an ampere meter and a power supply and is then connected with the lower ferromagnetic layer after passing through the packing layer; and magnetostriction coefficients of the upper ferromagnetic layer and the lower ferromagnetic layer have opposite symbols, and the magnetostriction coefficients are big and have the same small anisotropic index. The novel stress sensor based on the magnetoresistance effect overcomes the defects of poor sensitivity to an external environment, poor fatigue resistance, complex structure, difficult miniaturization, high cost, poor sensitivity and accuracy of the traditional stress sensor which cannot meet the demands. The novel stress sensor based on the magnetoresistance effect has the advantages of simplicity in circuit design, mature process and sensitivity and can quantify scales directly.

Description

technical field [0001] The invention belongs to the technical field of sensing, and in particular relates to a novel stress sensor based on the magnetoresistance effect. Background technique [0002] Prior to the present invention, the existing stress sensors were mainly based on the mechanical deformation caused by the stress acting on the elastic material, which brought changes in electrical or optical signals, so as to achieve the purpose of detecting stress. Its disadvantages are that it is sensitive to the external environment (such as temperature, humidity, oxidation and corrosion, etc.), poor fatigue resistance, complex structure, difficult miniaturization, high production cost, and the sensitivity and accuracy of detection cannot meet the current needs. Contents of the invention [0003] The purpose of the present invention is to overcome the above defects and develop a novel stress sensor based on the magnetoresistance effect. [0004] Technical scheme of the pre...

AI Technical Summary

Problems solved by technology

Its defect is that it is sensitive to the external environment (such as temperature, humidity, oxidation corrosion, etc.), poor fatigue resista...

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