Testing structure for improving failure analysis efficiency of breakdown voltage of insulator and using method thereof

A technology of breakdown voltage and failure analysis, applied in the direction of testing dielectric strength, circuits, electrical components, etc., can solve the problem of inability to accurately locate the failure location, failure analysis, etc.

Inactive Publication Date: 2012-10-10
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the defect in the prior art that after the connection line is burnt, it is impossible to accurately locate the failure position and perform failure analysis

Method used

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  • Testing structure for improving failure analysis efficiency of breakdown voltage of insulator and using method thereof
  • Testing structure for improving failure analysis efficiency of breakdown voltage of insulator and using method thereof

Examples

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Embodiment Construction

[0019] The present invention may be embodied in several forms without departing from its spirit and essential characteristics. It should be understood that the foregoing examples are not limited to the foregoing details, and unless otherwise indicated, its spirit and essential characteristics should be generally understood. Accordingly, all changes and modifications falling within the cluster and range of the claims, or equivalents to similar clusters and ranges are intended to be embraced by the appended claims.

[0020] The test structure designed by the present invention to improve the efficiency of insulator breakdown voltage failure analysis includes: several parallel capacitors 10, the upper plate 101 of each capacitor 10 is connected to the first metal pad 1 through the first connection 201, each capacitor 10 The lower plate 102 is connected to the second metal pad 2 through the second connection 202, which also includes: the third metal pad 3, connected to the second co...

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Abstract

The invention discloses a testing structure for improving failure analysis efficiency of breakdown voltage of an insulator. The testing structure comprises a plurality of shunt capacitors, wherein an upper polar plate of each capacitor is connected with a first metal pad through a first connecting wire, and a lower polar plate of each capacitor is connected with a second metal pad through a second connecting wire; and the testing structure is characterized by also comprising a third metal pad and a fourth metal pad, wherein the third metal pad is connected with the second connecting wire through a third connecting wire, and the fourth metal pad is connected with the first connecting wire through a fourth connecting wire. The testing structure for improving the failure analysis efficiency of the breakdown voltage of the insulator has the advantages that by adoption of the testing structure, the testing result is not influenced, and the failure positions of most of samples can be found during failure analysis.

Description

technical field [0001] The invention relates to a test structure of a semiconductor device, and relates to a test structure and a use method for improving the failure analysis efficiency of an insulator breakdown voltage. Background technique [0002] In the process reliability test, it is necessary to conduct an electrical breakdown test on the insulating layer, and the existing test structure is a bulk capacitor structure. [0003] Due to the requirements of layout design, the size of a single capacitor is limited, and at the same time, because the test has requirements for the total capacitor area, in order to reduce the test time and the amount of test samples, multiple large areas (in line with the layout design requirements) will be used in the layout design. ) capacitor structure, connected in parallel, refer to as figure 1 The structure shown includes: several parallel capacitors 10, the upper plate 101 of each capacitor 10 is connected to the first metal pad 1 thro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/12H01L23/544
CPCH01L2924/0002H01L2924/00
Inventor 尹彬锋赵敏李瀚超
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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