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Plasma enhanced chemical vapor deposition device

A chemical vapor deposition and plasma technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of limited uniformity improvement effect, increase machine cost, etc., and improve the uniformity of film formation , the effect of increased machine cost

Active Publication Date: 2012-10-24
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned various methods still have the problems of greatly increasing the cost of the machine and the limited effect of uniformity improvement.

Method used

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  • Plasma enhanced chemical vapor deposition device
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  • Plasma enhanced chemical vapor deposition device

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Embodiment Construction

[0032] A preferred embodiment of the present invention provides a plasma-assisted chemical vapor deposition device. The plasma-assisted chemical vapor deposition device includes a preparation chamber, an upper electrode, a lower electrode and at least one patterned dielectric material device. The upper electrode and the lower electrode are disposed opposite to each other in the preparation chamber for generating a plasma-assisted chemical vapor deposition reaction to deposit a thin film material on a substrate disposed on the lower electrode. The patterned dielectric material device is disposed on the lower electrode and adjacent to at least one corner of the substrate.

[0033] A preferred embodiment of the present invention provides a plasma-assisted chemical vapor deposition device. The plasma-assisted chemical vapor deposition device includes a preparation chamber, an upper electrode, a lower electrode and at least one patterned dielectric material device. The upper elec...

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Abstract

The invention discloses a plasma enhanced chemical vapor deposition device, comprising a preparation chamber, an upper electrode, a lower electrode, and at least a patterning medium material unit, wherein the upper electrode and the lower electrode are oppositely arranged in the preparation chamber for conducting a plasma enhanced chemical vapor deposition to depositing a thin-film material on a substrate arranged on the lower electrode; and the patterning medium material unit is arranged on the lower electrode and adjacent to at least one corner of the substrate.

Description

technical field [0001] The invention relates to a plasma-assisted chemical vapor deposition device, in particular to a plasma-assisted chemical vapor deposition device with a patterned dielectric material device arranged adjacent to the corner of the substrate to be filmed to improve the uniformity of film formation Chemical vapor deposition device. Background technique [0002] Plasma-enhanced chemical vapor deposition (PECVD) is a film-forming technology widely used in industries such as semiconductors, flat-panel displays, and solar energy. A general plasma-assisted chemical vapor deposition device uses two electrode plates and a radio frequency source to generate a plasma-assisted chemical vapor deposition reaction in a preparation chamber to produce a film-forming effect of a specific material on a substrate. [0003] When PECVD is used in the above-mentioned industries, the quality, speed and uniformity of film formation have always been important control and improvem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44
Inventor 杨国玺游正义李晓菁陈宣任
Owner ARCHERS
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