70results about How to "Improve the uniformity of film formation" patented technology

The embodiment of the invention provides semiconductor process equipment and an air inlet mechanism thereof. The air inlet mechanism comprises an air inlet supporting piece, a flow uniformizing cover and a plurality of adjusting pieces. The air inlet supporting piece is used for being arranged at the top of a process chamber, the flow uniformizing cover is arranged in the air inlet supporting piece, an annular flow uniformizing cavity is formed between the air inlet supporting piece and the flow uniformizing cover, the air inlet supporting piece is provided with an air inlet channel communicated with the flow uniformizing cavity, and the air inlet channel is used for guiding in air; a plurality of air inlet holes distributed at intervals in the circumferential direction are formed in the flow uniformizing cover, and the flow uniformizing cavity is communicated with a process cavity of the process chamber through the air inlet holes; a flange extending in the circumferential direction is arranged on the outer circumferential wall of the flow uniformizing cover and located at the bottoms of the multiple air inlet holes. The multiple adjusting pieces are movably arranged on the flange and correspond to the multiple air inlet holes respectively, and the adjusting pieces are used for adjusting the flow of air entering the air inlet holes from the flow uniformizing cavity. According to the embodiment of the invention, uniform air inlet of the process chamber is realized, and the film forming uniformity and yield of wafers are greatly improved.

The invention provides a magnetron sputtering device and a magnetic field distribution adjusting method thereof, and relates to the field of magnetron sputtering. Poor stripes of a planar target material can be effectively improved, and the utilization rate of a target material and the film formation homogeneity can be improved. The magnetron sputtering device comprises a sputtering cavity, the planar target material, at least three sets of electromagnetic coils, a driving unit and connection wires, wherein the planar target material is arranged in the sputtering cavity; the at least three sets of electromagnetic coils are arranged on the part, away from one side being sputtered, of the planar target material, one end of each set of electromagnetic coil faces the planer target material, and the other end is away from the planar target material; the driving unit is configured to control on-off and magnetism direction of each set of electromagnetic coil; and the connection wires correspond to the three sets of electromagnetic coils one by one, and are configured to be electrically connected with the three sets of electromagnetic coils and the driving unit.

The invention provides an epitaxial growth device and a manufacturing method thereof, and belongs to the technical field of semiconductors. The epitaxial growth device comprises a first quartz bell jar and a funnel-shaped second quartz bell jar, wherein the first quartz bell jar and the second quartz bell jar form a reaction chamber, a base for placing a silicon wafer and a base support frame forsupporting the base are arranged in the reaction chamber, heating bulbs for providing reaction energy are arranged outside the reaction chamber, and comprise a first heating bulb located on the side,close to the first quartz bell jar, of the base and a second heating bulb located on the side, close to the second quartz bell jar, of the base, the epitaxial growth device further comprises a light path control structure located in the reaction chamber and arranged between the second heating bulb and the base, and the light path control structure can refract part of light emitted by the second heating bulb and entering the reaction chamber through the funnel surface of the second quartz bell jar to an area far away from the center of the silicon wafer. According to the invention, the film forming uniformity of an epitaxial film can be improved.

The invention discloses a plasma enhanced chemical vapor deposition device, comprising a preparation chamber, an upper electrode, a lower electrode, and at least a patterning medium material unit, wherein the upper electrode and the lower electrode are oppositely arranged in the preparation chamber for conducting a plasma enhanced chemical vapor deposition to depositing a thin-film material on a substrate arranged on the lower electrode; and the patterning medium material unit is arranged on the lower electrode and adjacent to at least one corner of the substrate.

A transparent metal electrode and an organic electroluminescent top-emitting device based on the electrode, the transparent metal electrode is provided with three metal layers, the second metal layer Cu is stacked between the first metal layer Al and the second metal layer between. The thickness of the first metal layer Al is set to 2nm, the thickness of the second metal layer Cu is set to 1nm, and the thickness of the third metal layer Ag is set to 20-7nm. The transparent metal electrode of the invention has the advantages of high transmittance, high conductivity and high uniformity of film formation. The organic electroluminescent top-emitting device based on the transparent metal electrode of the present invention has high efficiency.

The invention discloses a method for improving the film formation uniformity of a wafer. The method comprises the steps that nitrogen gas is fed into a hot oxidizing furnace tube; a wafer holder is rotated; the wafer holder is lifted to a first position from the original position; the wafer holder keeps rotating, and a main oxidation process is conducted on the wafer; after the main oxidation process is completed, the wafer holder keeps rotating, and the wafer holder drops to the original position from a process stroke position. According to the method for improving the film formation uniformity of the wafer, the wafer holder keeps rotating at a low speed in the boat lifting process, the boat dropping process and the main oxidation process, as a result, the influence of nonuniform distribution of a temperature field and a gas flow field on the film formation uniformity of the wafer can be reduced, the film formation uniformity of the wafer in a semiconductor vertical furnace device is optimized, and the production cost is reduced.

The invention discloses a method for preparing ultrathin pinhole-free dielectric films. The method comprises the steps that (1), 0.5-1nm ultrathin films are obtained by deposition through a physical vapor deposition method; (2), the 0.5-1nm ultrathin metal films or ultrathin nonmetal films obtained in the step (2) are subjected to a redox reaction through gas plasma with oxidation characteristics;and (3), the step (1) and the step (2) are repeatedly carried out according to the target thickness of the to-be-prepared ultrathin pinhole-free dielectric films, and the ultrathin pinhole-free dielectric films with the target thickness are obtained. The method for preparing the ultrathin pinhole-free dielectric films has no chemical corrosion, can be in situ in the same cavity, and is high in film forming speed; and the ultrathin pinhole-free dielectric films prepared by the method has high adhesivity, high compactness and no pinhole defect, and the thickness and the uniformity can be controlled in a large area.

The invention belongs to the field of blue-light emitting materials, and specifically relates to a preparation method of composite blue-light emitting materials displayed by OLED, and an application of the composite blue-light emitting materials. The preparation method of composite blue-light emitting materials displayed by OLED is characterized by taking blue-light emitting materials as the base, refrigeration-rubbing poly-phenylene vinylene organic matter and polyfluorene organic matter together with the blue-light emitting materials, and dispersing the refrigeration-rubbing poly-phenylene vinylene organic matter, the polyfluorene organic matter and the blue-light emitting materials in liquid-state polypyrrole, thus greatly improving the voltage stability, the heat stability, the luminous efficiency and the service life of the composite blue-light emitting materials obtained through refrigeration-rubbing composition. The application method of the composite blue-light emitting materials prepared through the above method is characterized by roller coating, rotation coating and printing the liquid-state composite blue-light emitting materials on a substrate to form a coating layer, and utilizing instantaneous heat rapid polymerization of microwave to form a stable luminous thin film layer on the substrate, thus greatly improving film forming uniformity, high effectiveness, ultrathin property and compactness of the luminous thin film layer, and greatly improving the service life of the device.

The invention relates to a blue-light perovskite light-emitting diode based on a modified hole transport layer and a production method thereof. The device comprises an anode substrate, the modified hole transport layer, a perovskite light-emitting layer, an electron transport layer and a cathode. According to the invention, the propanolamine molecular additive is creatively introduced so that the crystal growth of the blue light perovskite luminescent layer can be effectively regulated and controlled, a high-quality luminescent film with high uniformity, high crystallinity and low defect density is formed, and the photoluminescence characteristic and the spectral stability of the film are enhanced; and the brightness and the external quantum efficiency of the produced blue light perovskite light-emitting diode are obviously improved, and the service life of the produced blue light perovskite light-emitting diode is obviously prolonged. The modification method disclosed by the invention is low in cost, simple to operate, remarkable in effect and suitable for various existing preparation processes such as spin coating, blade coating, printing, ink-jet printing and the like.

The invention discloses a metal surface silane treatment agent, which includes 20 to 30 parts by weight of silane coupling agent, 20 to 30 parts of film-forming agent, 5 to 7 parts of complexing agent, and 15 to 30 parts of pure water. The film-forming agent is a thickening agent, and the complexing agent is sodium citrate, which makes the present invention have high aging effect, super concentration, low carbon and energy saving, no residue, no phosphorus, no zinc, no chromium, no fluorine, Zirconium-free and superior environmental performance, the silane film has anti-corrosion properties and excellent adhesion properties.

The present application discloses an OLED display panel, which includes a display area and a non-display area, and also includes an array substrate, a first barrier wall, a second barrier wall, multiple metal traces, multiple first grooves, and a thin film encapsulation layer; Wherein, the metal wiring layer is located in the fan-out wiring area of ​​the array substrate close to the lower frame, part of the metal wiring is arranged along a direction perpendicular to the first retaining wall, and the other part of the metal wiring is The included angle with the first retaining wall is an acute angle; a plurality of the first grooves are arranged in the fan-out wiring area, and the first grooves are arranged along the direction of the metal wiring; the The part of the array substrate corresponding to the second region is further provided with a plurality of second grooves, and the second grooves are arranged along a direction perpendicular to the first barrier wall.