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QLED device and preparation method thereof

A device and fossil technology, applied in the field of QLED devices and their preparation, can solve the problems of easily damaged quantum dot light-emitting layer, poor film-forming uniformity, uneven device light-emitting, etc., to achieve excellent light-emitting uniformity and improve film-forming uniformity. , the effect of simplifying the preparation process

Active Publication Date: 2019-01-18
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a QLED device and its preparation method, aiming to solve the problem of poor film formation uniformity of the existing QLED device or the easy damage of the quantum dot light-emitting layer, resulting in uneven light emission of the device

Method used

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  • QLED device and preparation method thereof

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preparation example Construction

[0040] and, combined figure 1 , the embodiment of the present invention also provides a method for preparing a positive QLED device, comprising the following steps:

[0041] S01. Depositing a graphene layer on the substrate, patterning the graphene layer to form a graphene pixel array 4', modifying the surface of the graphene pixel array 4' away from the substrate, to obtain Functionalized graphene pixel array4;

[0042] S02. Provide an anode 1, deposit a hole injection layer 2 and a hole transport layer 3 sequentially on the anode 1, then transfer the functionalized graphene pixel array 4 onto the hole transport layer 3, and make the modification The treated surface faces away from said hole transport layer 3;

[0043] S03. On the functionalized graphene pixel array 4, deposit the quantum dot light-emitting layer 5, the electron transport layer 6 and the cathode 7 in sequence.

[0044] Specifically, in the above step S01 , the method for depositing the graphene layer on th...

Embodiment 1

[0059] A method for preparing a positive-type printed quantum dot light-emitting diode, comprising the following steps:

[0060] S11. Adopting CVD method to prepare a graphene layer with a thickness of 20nm on the copper sheet, transfer the graphene layer to the silicon chip, and etch the graphene layer into graphene with regular arrangement by photolithography For the pixel array, the graphene on the surface of the graphene pixel array is activated by concentrated sulfuric acid, so that the surface has a large number of active functional groups to obtain a functionalized graphene pixel array;

[0061] S12. Print the PEDOT hole injection layer and the TFB hole transport layer sequentially on the ITO anode, and then transfer the functionalized graphene pixel array to the TFB hole transport layer by a transfer printing method, and the functionalized graphene pixel array The surface with a large number of reactive functional groups faces away from the hole transport layer;

[00...

Embodiment 2

[0064] A method for preparing a reverse printed quantum dot light-emitting diode, comprising the following steps:

[0065] S21. Adopting CVD method to prepare a graphene layer with a thickness of 20nm on the copper sheet, transfer the graphene layer to the silicon chip, and etch the graphene layer into graphene with regular arrangement by photolithography For the pixel array, the graphene on the surface of the graphene pixel array is activated by concentrated sulfuric acid, so that the surface has a large number of active functional groups to obtain a functionalized graphene pixel array;

[0066] S22. Print the ZnO electron transport layer sequentially on the Al cathode, and then transfer the functionalized graphene pixel array to the ZnO electron transport layer by a transfer printing method, and the functionalized graphene pixel array has a surface with a large number of active functional groups on the back For the ZnO electron transport layer;

[0067] S23. Using a printin...

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Abstract

A QLED device comprises sequentially laminated bottom electrodes, first functional layer, a functionalized graphene pixel array disposed on the first functional layer, A light emit layer of a quantumdot arrange on that functionalized graphene pixel array, and a second functional layer and a top electrode sequentially bonded to the quantum dot light emitting layer, wherein the functionalized graphene pixel array comprises a graphene pixel array and an active functional group modified on the surface of the graphene pixel array, and the active functional group is modified on the surface of the graphene pixel array facing away from the hole transport layer, and the quantum dot light emitting layer is bonded with the functionalized graphene pixel array through the active functional group.

Description

technical field [0001] The invention belongs to the technical field of light-emitting diodes, and in particular relates to a QLED device and a preparation method thereof. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, are nanocrystalline particles with a radius smaller than or close to the radius of the Bohr excitons. Quantum dots have important application prospects in the field of optoelectronics and electro-optic due to their properties such as quantum confinement effect, surface effect, quantum size effect and quantum tunneling effect, as well as outstanding advantages such as good monochromaticity, high color purity and narrow emission spectrum. . [0003] Quantum dot-based light-emitting diodes are called quantum dot light-emitting diodes (Quantum dots light-emitting diode, QLED), which is a new type of display device. Quantum dot display devices have the advantages of wide color gamut coverage, easy color control, and high colo...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/13H10K50/115H10K71/00H10K50/00H01L33/00H01L33/40H10K85/50
Inventor 曹蔚然梁柱荣刘佳
Owner TCL CORPORATION
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