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Chemical vapor deposition equipment

A technology of chemical vapor deposition and equipment, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of uneven coating thickness, etc., to improve the uniformity of film formation, improve product yield, make up for The effect of local defect bad problems

Inactive Publication Date: 2014-07-16
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is how to reduce the defects of uneven coating thickness caused by the aging of spare parts during the long-term use of chemical vapor deposition equipment.

Method used

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Embodiment Construction

[0025] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0026] In order to solve the phenomenon that the upper and lower electrode plates are deformed and the aperture of the gas diffuser is locally enlarged due to the aging of spare parts in the chemical vapor deposition equipment in the prior art, which causes the phenomenon that the locally deposited film layer on the substrate is relatively thick and the locally deposited film layer is relatively thin, the present invention The gas diffuser is set as a split structure, and each split diffuser is equipped with a lifting adjustment mechanism to separately control the distance between the local upper and lower electrode plates. When the local deposited film is thick, the upper ...

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Abstract

The invention discloses chemical vapor deposition equipment which comprises a base and a cover plate, wherein the base and the cover plate are groove-shaped and form a vacuum reaction chamber after being fastened together; the base is internally provided with a platform deck on which a to-be-coated substrate is placed; the cover plate is internally provided with a gas diffuser; a top cover of the cover plate is provided with a gas inlet pipe; the gas diffuser is of a split structure and comprises multiple independent split diffusers; the multiple split diffusers are positioned in the same horizontal plane; each split diffuser is provided with an ascending-descending regulating mechanism used for driving the corresponding split diffuser to ascend and descend along the vertical direction. The chemical vapor deposition equipment is capable of ensuring that reactants sprayed by the whole gas diffuser are uniformly deposited on the substrate below, improving the film formation uniformity of the substrate, overcoming the local semiconductor film defect and poorness problem caused by equipment aging, improving the TFT (Thin-Film Transistor) product yield and prolonging the service lives of equipment spare parts.

Description

technical field [0001] The invention relates to the technical field of manufacturing liquid crystal display panels, in particular to a chemical vapor deposition equipment. Background technique [0002] In the manufacturing process of TFT-LCD (Thin Film Transistor-Liquid Crystal Display, thin film transistor liquid crystal display), CVD (Chemical Vapor Deposition, chemical vapor deposition) is one of the important processes to form TFT on the substrate, which is what we commonly call coating , wherein the coating equipment uses high-frequency voltage in a high-temperature vacuum environment to generate plasma from the reactive gas, and finally forms a solid-state semiconductor to be deposited on the substrate. In order to form a semiconductor film with a uniform thickness on the substrate, it is necessary to have strict requirements on the precision of the reaction equipment. [0003] The schematic diagram of the structure of chemical vapor deposition equipment commonly used...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
Inventor 艾青南周贺胡青飞
Owner BOE TECH GRP CO LTD
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