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High-voltage device and overvoltage protection method for high-voltage transistor

A technology of high-voltage transistors and high-voltage devices, which is applied in the field of high-voltage semiconductor devices, can solve the problems of lack of self-protection of lateral high-voltage transistors, and achieve the effect of protection from damage

Active Publication Date: 2015-03-11
CHENGDU MONOLITHIC POWER SYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This shortcoming makes the lateral high-voltage transistor lack self-protection ability in the case of overvoltage, so a high-voltage device including a high-voltage transistor and an integrated high-voltage protection circuit is required to prevent the high-voltage transistor from being damaged during overvoltage

Method used

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  • High-voltage device and overvoltage protection method for high-voltage transistor
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  • High-voltage device and overvoltage protection method for high-voltage transistor

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Embodiment Construction

[0014] Embodiments of the present invention are described below with reference to the accompanying drawings. In order to better understand the present invention, some specific details are given in the following description, such as example circuits and example values ​​of components in these example circuits. It will be understood by those skilled in the art that the present invention may be practiced without one or more of the specific details, or with the addition of other methods, elements, or materials. In addition, in order to clearly illustrate the present invention, detailed descriptions and schematic diagrams of some well-known structures, materials or steps are omitted in the description of the present invention. In addition, the term "coupled" referred to herein refers to direct or indirect connection in an electrical or non-electrical form.

[0015] The invention discloses a high-voltage device, which includes a high-voltage transistor and an integrated overvoltage...

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Abstract

The present technology discloses a high-voltage device comprising a high-voltage transistor and an integrated over-voltage protection circuit. The over-voltage protection circuit monitors a voltage across the high-voltage transistor to detect an over-voltage condition of the high-voltage transistor, and turns the high-voltage transistor ON when the over-voltage condition is detected. Thus, once the high-voltage transistor is in over-voltage condition, the high-voltage transistor is turned ON and can dissipate the power from the over-voltage event through its channel.

Description

technical field [0001] The invention relates to a high-voltage semiconductor device, in particular to a high-voltage device with an overvoltage protection function and an overvoltage protection method for a high-voltage transistor. Background technique [0002] High-voltage transistors are widely used as switching devices in power supplies (such as AC / DC converters) in the fields of industrial electronics and consumer electronics. The input voltage of these applications is usually very high, such as 500V~1000V. Therefore, high-voltage transistors need to have a high breakdown voltage to withstand such a high input voltage. [0003] Most high-voltage transistors are designed as vertical devices, and their current direction is to flow into the semiconductor substrate, that is, the current direction is perpendicular to the plane where the semiconductor substrate is located. This structure can obtain smaller on-resistance and good power handling capability under a given breakd...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/08
CPCH03K17/0822
Inventor 唐纳德·迪斯尼
Owner CHENGDU MONOLITHIC POWER SYST