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Semiconductor device and method of operation thereof

An operation method and semiconductor technology, applied in the field of decapture, can solve problems such as deterioration of electrical characteristics of the tunnel insulating layer 13

Active Publication Date: 2017-03-15
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, as programming, erasing, and reading operations are repeatedly performed, the electrical characteristics of the tunnel insulating layer 13 gradually deteriorate.

Method used

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  • Semiconductor device and method of operation thereof
  • Semiconductor device and method of operation thereof
  • Semiconductor device and method of operation thereof

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Embodiment Construction

[0019] Some exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The accompanying drawings are provided to enable those of ordinary skill in the art to understand the scope of the embodiments of the present invention.

[0020] figure 2 is a block diagram of a semiconductor device showing a programming method according to the present invention.

[0021] see figure 2 , the semiconductor device includes: a memory cell array 110; circuit groups (130, 140, 150, 160, 170, and 180) for performing programming, reading, or erasing operations on memory cells included in the memory cell array 110; and The control circuit 120 is used for controlling the circuit group (130, 140, 150, 160, 170 and 180) to set the threshold voltage of the memory cell according to the input data.

[0022] For example, in a NAND flash memory device, the circuit group may include a voltage generator 130, a row decoder 140, a page buff...

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Abstract

The invention discloses a semiconductor device and an operation method thereof. The method of operating the semiconductor device includes: programming the memory cell by supplying a program voltage to a control gate of the memory cell and supplying a detrap voltage to a well formed in a semiconductor substrate; removing the tunnel insulating layer in the memory cell by applying a voltage lower than the detrap voltage to the control gate and also supplying the detrap voltage to the well before the programmed memory cell is verified. electrons trapped in.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2011-0038987 filed on Apr. 26, 2011, the entire content of which is hereby incorporated by reference. technical field [0003] Exemplary embodiments relate to a semiconductor device and an operating method thereof, and more particularly, to a detrap method in a program operation. Background technique [0004] A semiconductor device includes a plurality of memory cells for storing data. In order to store data in a memory cell, a program operation is performed. During a programming operation, some electrons are trapped in a particular layer, and the trapped electrons can deteriorate the electrical characteristics of the memory cell. The following reference figure 1 To describe this electron capture phenomenon. [0005] figure 1 is a cross-sectional view of a memory cell showing features of a conventional programming operation. [0006] Such as ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/02G11C16/34
CPCG11C16/0483G11C16/10G11C16/3459G11C16/30
Inventor 白容默
Owner SK HYNIX INC