Method for detecting diffusivity of wellblock implantation ions in different concentrations
A technology for implanting ions and diffusing capacity, which is used in the field of detecting ion diffusing capacity and detecting the diffusing capacity of implanted ions in the well area under different concentration conditions. Ease of use
Active Publication Date: 2012-11-07
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
[0004] At present, the lateral diffusion of ions under different ion concentration conditions in the well area is mostly carried out through wafer acceptance test (wafer acceptance test, WAT) and electrical test, because many subsequent processes will affect WAT and electrical test results. , it is difficult to accurately measure its lateral diffusion ability, and it increases the process cycle time
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[0021] In the method for detecting the diffusion ability of implanted ions in the well area under different concentration conditions in the embodiment of the present invention, the following steps are included:
[0022] Step 1, build a test module. Different groups of active areas (AA) with a certain area are divided on the module, for example, the size is 20umx50um. On these AAs, the P well area and the N well area are separated by intervals, and the P well and the N well are separated by shallow trench isolation (STI), and the bottom width of the STI is made different windows based on the actual process. For example, assuming that the actual STI width is 250nm, ten equally divided windows from 160 to 250 can be made respectively. For example, assuming that the actual STI width is Y nm, then equally divided windows from Y-40 to Y+50 can be made respectively. Such test modules can be laid on the wafer as required. Under the premise of determining other conditions, change the...
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The invention relates to a method for detecting the diffusivity of wellblock implantation ions in different concentrations, and the method includes the following steps: step 1, establishing a test module, wherein active areas on the module include a P wellblock and an N wellblock separated through shallow trench isolation; step 2, simulating the process structure, and forming tungsten connection holes in the wellblock; step 3; performing ion implantation, only implantation of ions in different concentrations into the P wellblock and the N wellblock; and step 4, scanning the test module to obtain a continuous-tone image of the tungsten connection holes. The method provides references for wellblock optimization of the semiconductor device, provides guarantee for yield improvement, and is simple and easy to carry out.
Description
technical field [0001] The invention belongs to the field of semiconductors, and relates to a method for detecting the diffusion ability of ions, in particular to a method for detecting the diffusion ability of implanted ions in a well area under different concentration conditions. Background technique [0002] The quality of the well area of a semiconductor device plays a key role in the semiconductor device. When the device is below 55nm, the control of the well area is especially important. There are many factors that affect the well area of semiconductor devices, such as the dose, depth, angle, and ion diffusion of implanted ions. However, due to the lack of an effective evaluation method for the ion's own diffusion ability, it is difficult to control its impact on the device. [0003] The ions implanted into the well area will diffuse along the damaged lattice during the subsequent lattice repair thermal annealing process, and most of them diffuse laterally. The l...
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IPC IPC(8): H01L21/66
Inventor 范荣伟倪棋梁龙吟王恺陈宏璘
Owner SHANGHAI HUALI MICROELECTRONICS CORP