Pixel structure, as well as manufacturing method and display device thereof
A technology of pixel structure and manufacturing method, which is applied in the direction of semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve the problems of complex production line manufacturing process, high development cost, and large number of masks, and is conducive to popularization and application. The effect of saving manufacturing cost and simplifying the process
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[0043] The basic idea of the present invention is: deposit a metal film on the glass substrate, form the gate and gate line through the first mask process, and perform the coating of the gate insulation (GI) layer and the passivation (PVX) layer; Deposition of tin metal oxide (ITO) layer, source-drain (SD) metal layer, and ohmic contact layer, through the second mask process, to form TFT drain, pixel electrode and ohmic contact on the TFT drain layer; the semiconductor layer, the ohmic contact layer, and the SD metal layer are coated in sequence, and the TFT source and the semiconductor channel between the TFT source and drain are formed through the third mask process.
[0044] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail by citing the following embodiments and referring to the accompanying drawings.
[0045] figure 1 It shows the implementation process of the pixel...
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