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Pixel structure, as well as manufacturing method and display device thereof

A technology of pixel structure and manufacturing method, which is applied in the direction of semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve the problems of complex production line manufacturing process, high development cost, and large number of masks, and is conducive to popularization and application. The effect of saving manufacturing cost and simplifying the process

Active Publication Date: 2014-09-17
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, traditional array substrates generally adopt five-mask (5Mask) or four-mask (4Mask) manufacturing processes. Array substrates manufactured using 5Mask or 4Mask processes have a large number of masks in the manufacturing process, and the investment in development The cost is relatively high; and the production line needs a large number of production lines for production due to the complexity of the manufacturing process, which increases the input cost of the production line

Method used

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  • Pixel structure, as well as manufacturing method and display device thereof
  • Pixel structure, as well as manufacturing method and display device thereof
  • Pixel structure, as well as manufacturing method and display device thereof

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Embodiment Construction

[0043] The basic idea of ​​the present invention is: deposit a metal film on the glass substrate, form the gate and gate line through the first mask process, and perform the coating of the gate insulation (GI) layer and the passivation (PVX) layer; Deposition of tin metal oxide (ITO) layer, source-drain (SD) metal layer, and ohmic contact layer, through the second mask process, to form TFT drain, pixel electrode and ohmic contact on the TFT drain layer; the semiconductor layer, the ohmic contact layer, and the SD metal layer are coated in sequence, and the TFT source and the semiconductor channel between the TFT source and drain are formed through the third mask process.

[0044] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail by citing the following embodiments and referring to the accompanying drawings.

[0045] figure 1 It shows the implementation process of the pixel...

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Abstract

According to embodiments of the invention, a TFT array substrate, a manufacturing method of the TFT array substrate and a display device are provided. The method comprises: depositing a metal film on a substrate, and forming a gate electrode and a gate line by using a first patterning process; forming a gate insulating layer and a passivation layer in this order on the substrate to cover the gate electrode and the gate line; depositing a transparent conductive layer, a first source / drain metal layer and a first ohmic contact layer in this order, and forming a drain electrode, a pixel electrode, a data line, and a first ohmic contact layer pattern provided on the drain electrode by using a second patterning process; and depositing a semiconductor layer, a second ohmic contact layer and a second source / drain metal layer in this order, and forming a source electrode, a second ohmic contact layer pattern provided below the source electrode, and a semiconductor channel between the source electrode and the drain electrode by a third patterning process.

Description

technical field [0001] The present invention relates to the technical field of array substrates, in particular to a pixel structure, a manufacturing method thereof, and a display device. Background technique [0002] Thin Film Transis-Liquid Crystal Display (TFT-LCD) has the advantages of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. TFT-LCD devices are formed by pairing an array substrate and a color filter substrate. Gate lines and signal lines defining pixel regions are arranged to cross each other on the array substrate, and pixel electrodes and thin film transistors (TFTs) are arranged in each pixel region. Driving signals are applied to the gate lines, and image data are applied to the pixel electrodes through the signal lines. A black matrix is ​​arranged on the color filter substrate so that light cannot pass through the area other than the pixel electrodes, a color filter layer is ar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/12
CPCH01L29/786H01L21/77H01L29/66765H01L29/41733H01L29/78669H01L27/1288H01L27/12H01L29/78618H01L27/124H01L27/1214H01L27/1222H01L27/127
Inventor 沈奇雨
Owner BOE TECH GRP CO LTD