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sputtering device

A sputtering device and target technology, which is applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of reduced film-forming properties, low adhesion, and falling off of splashed particles, so as to improve film-forming properties and inhibit adhesion Effect

Active Publication Date: 2015-09-09
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The attached spatter particles are easy to fall off the target due to arc discharge, etc.
Then, if the dropped spatter particles adhere to the substrate, the adhesion is low, so the film is easily peeled off at this part, and there is a problem that the film formation characteristics are lowered.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1）

[0021] The sputtering device of the present invention will be described below.

[0022] The sputtering device 1 includes a vacuum chamber 11. The substrate S is conveyed on the sputtering device 1, and the substrate S is held on the top surface side of the vacuum chamber 11 by a substrate holding portion (not shown) in a state where the film formation surface faces the ground.

[0023] A gas introduction unit 12 is provided on the side wall surface of the vacuum chamber 11. The gas introduction unit 12 is connected to gas sources 123a and 123b through gas introduction pipes 122 installed on the mass flow controllers 121a and 121b, respectively. Sputtering gas such as argon, H 2 O, O 2 , N 2 The mass flow controllers 121a and 121b of these gases can be introduced into the vacuum chamber 11 at a constant flow rate.

[0024] The target assembly 13 is arranged at a position opposed to the substrate S installed in the vacuum chamber 11. The target assembly 13 includes four backing plat...

Embodiment approach 2）

[0042] use Figure 4 The sputtering device of Embodiment 2 will be described. In the second embodiment, because in addition to using the cross-sectional shape and Figure 1~Figure 3 The illustrated targets 132a to 132d of the first embodiment are the same as the sputtering apparatus shown in the first embodiment except that the targets 132a to 132d are different, so the description is omitted.

[0043] The targets 41a and 41b in the sputtering device of this embodiment are tapered at the ends in the width direction. In this way, since the ends of the targets 41a and 41b in the width direction are inclined, the distance between the sealing member 20 and the lower surface of the flange portion 22 is made larger than that of the sputtering device 1 of the first embodiment. In addition, only the vicinity of the targets 41a and 41b are shown here for explanation.

[0044] In this way, by providing tapers on the ends of the targets 41a and 41b, compared with the case where no tapers ar...

Embodiment approach 3）

[0050] use Image 6 The sputtering device of this embodiment will be described. In Embodiment 3, since it is the same as the sputtering apparatus shown in Embodiment 2 except that a sealing member having a shape different from that of Embodiment 2 is used, the description is omitted.

[0051] In this embodiment, the sealing member 42 is provided with a recessed part on the whole surface. Thereby, the surface area of ​​the sealing member 42 can be further increased, and more non-adhesive particles can be adhered. Of course, the sealing member 42 is also subjected to the sandblasting process described above.

[0052] If the sputtering apparatus of each of the above-mentioned Embodiments 1 to 3 is used, the film forming characteristics can be improved.

[0053] (Other implementation methods)

[0054] The present invention is not limited to the above-mentioned Embodiments 1 to 3. For example, the number of targets installed is four in this embodiment, but it is not limited to this. Fo...

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Abstract

Disclosed is a sputtering device (1) provided with a vacuum chamber (11), a plurality of targets (132a-132d) arranged in parallel having a specified distance therebetween and disposed opposite of a substrate provided in the vacuum chamber, a power source to apply voltage to the targets, and a gas introduction means (12) for introducing gas into the vacuum chamber. The sputtering device also has shields (20) that cover the upper surfaces of the ends of the targets.

Description

Technical field [0001] The invention relates to a sputtering device. Background technique [0002] When forming a thin film on a substrate, the magnetron sputtering method is often used for the advantages of high film formation speed. In the magnetron sputtering method, a magnet member composed of a plurality of magnets with alternating polarities is installed behind the target, and the magnet member is used to form a magnetic beam in front of the target to capture electrons, thereby improving the front of the target The electron density increases the collision probability between these electrons and the gas introduced into the vacuum chamber, and increases the plasma density for sputtering. [0003] However, in recent years, as substrates have increased in size, magnetron sputtering devices have also increased in size. Therefore, a sputtering apparatus capable of forming a film on a large-area substrate by arranging a plurality of targets in parallel is known (for example, refer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34
CPCC23C14/3407C23C14/352H01J37/3441H01J37/3408
Inventor 中岛铁兵金正健郑炳和李尚浩
Owner ULVAC INC