Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gas leveling device for improving etching process

A gas device and process technology, applied in the field of gas uniform device, can solve problems such as impossibility, cavity influence, and equipment sealing performance, and achieve good uniformity, easy manufacture, and simple structure

Inactive Publication Date: 2012-11-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods have certain disadvantages. When gas is supplied to the entire cavity for reactive etching, it will affect the cavity. Long-term etching will affect the sealing of the equipment. Highly demanding reactions cannot be carried out
It is also difficult to ensure the uniformity of the gas by using the gas pipe to supply the gas to the designated position. Therefore, how to accurately transport the reaction gas to the vicinity of the sample stage and maintain good uniformity is the key issue to ensure the quality of the reaction.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gas leveling device for improving etching process
  • Gas leveling device for improving etching process
  • Gas leveling device for improving etching process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0022] Such as figure 1 as shown, figure 1 It is a schematic diagram of the gas uniform device used to improve the etching process provided by the present invention. The device is composed of an air inlet pipe and a gas uniform ring. Both the gas inlet pipe and the gas uniform ring are made of hollow tubes. The place is sealed, and the gas uniform ring has air holes on the surface of the plane where it is located.

[0023] Wherein, the hollow tube for making the air inlet pipe and the gas uniform ring is a stainless steel tube with an outer diameter of 6 mm to 15 mm and an inner diameter of 4 mm to 14 mm. The gas uniform ring is located near the sample stage for placing the sample to be etched, and the air hole is opene...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a gas leveling device for improving an etching process. The device comprises a gas inlet pipe and a gas leveling ring, wherein the gas inlet pipe and the gas leveling ring are made of hollow pipes and communicated with each other, the connection portion of the gas inlet pipe and the gas leveling ring is sealed, and the surface of a plane of the gas leveling ring is provided with gas holes. By the aid of the device, reacting gas is transported to a position which is close to a sampling platform directly and accurately, the dirt of the acting gas for a cavity is reduced, the gas is distributed on the surface of an etched article evenly, and the etching has good uniformity.

Description

technical field [0001] The invention relates to the technical field of etching technology, in particular to a gas uniform device for improving the etching technology. Background technique [0002] Etching process is an important part of microfabrication, generally divided into wet etching and dry etching. Among them, the commonly used dry etching methods include ICP, RIE, IBE, etc. These dry etching methods require the participation of a certain amount of reaction gas, and the uniformity of the gas flow determines the uniformity of the etching, while in the high vacuum reaction Only a small amount of gas needs to be delivered near the sample stage. The currently used method is to supply gas to the entire reaction chamber through the wall of the vacuum chamber or use a gas pipe to transport the reaction gas to a designated position. These methods have certain disadvantages. When gas is supplied to the entire cavity for reactive etching, it will affect the cavity. Long-term ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00
Inventor 刘宇刘明龙世兵谢常青胡媛
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products