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Method for manufacturing semiconductor device

A semiconductor and chip technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of reduced reliability and inability to distribute semiconductor chips evenly, and achieve uniform distribution in the plane

Inactive Publication Date: 2012-12-05
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, in the prior art, it was not possible to make the in-plane distribution of the electrical characteristics of the sealed semiconductor chip in the off state, that is, the withstand voltage and the leakage current, uniform.
Therefore, there is a problem of decreased reliability

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

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Embodiment Construction

[0023] figure 1 It is a cross-sectional view showing a semiconductor device according to an embodiment of the present invention. The back surface of the semiconductor chip 1 is bonded to an electrode substrate 3 with a conductive bonding material 2 . The conductive bonding material 2 is solder, Ag paste, conductive adhesive, or the like. The electrode substrate 3 is mounted on a heat sink 5 via an insulating sheet 4 having excellent thermal conductivity. The surface of the semiconductor chip 1 is connected to external wiring terminals 7 by wires 6 such as Al or Cu. The semiconductor chip 1 , a part of the electrode substrate 3 , the insulating sheet 4 , a part of the heat sink 5 , the wire 6 , and a part of the external wiring terminal 7 are sealed with an insulating resin 8 .

[0024] Next, the manufacturing process of the semiconductor chip 1 will be described with reference to the drawings. Figure 2 to Figure 8 It is a sectional view showing the manufacturing process o...

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Abstract

The invention obtains a method for manufacturing a semiconductor device which can make the in-plane distribution of the breakdown voltage and the leakage current of a semiconductor chip after encapsulation to be uniform. The method comprises: obtaining an in-plane distribution of impurity concentration of a PN junction region in the semiconductor chip before encapsulation so that an in-plane distribution of breakdown voltage and leakage current of the semiconductor chip become uniform after encapsulation; forming the PN junction region having the obtained in-plane distribution of impurity concentration on the back side of the semiconductor chip; and sealing the semiconductor chip with the resin after forming the PN junction region.

Description

technical field [0001] The present invention relates to a method of manufacturing a resin-sealed semiconductor device in which a semiconductor chip is sealed with a resin. Background technique [0002] A resin-sealed type semiconductor device in which a semiconductor chip is sealed with a resin is widely used. In such a semiconductor device, thermal stress occurs due to a difference in thermal expansion coefficient between the resin and the semiconductor chip. In addition, electric current concentrates on the bonding surface of the wire or the lead frame and the semiconductor chip to generate heat. Therefore, there is a problem that the stress distribution or temperature distribution of the sealed semiconductor chip is not uniform, and the in-plane distribution of the electrical characteristics of the sealed semiconductor chip is uneven. In recent years, in order to improve performance and reduce costs, the thickness of semiconductor chips has been made ultra-thin to 200 μ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/56H01L21/336
CPCH01L2224/29339H01L22/20H01L2224/45124H01L2224/4911H01L22/12H01L24/45H01L2924/0781H01L23/3107H01L24/48H01L23/498H01L2224/32245H01L24/32H01L2224/48247H01L2924/13091H01L23/367H01L24/49H01L24/29H01L29/7397H01L29/0834H01L29/66348H01L2224/4847H01L29/36H01L2224/73265H01L2224/29101H01L29/0847H01L2924/13055H01L2224/45147H01L2924/01015H01L2924/01047H01L2924/1306H01L2924/1305H01L2924/12036H01L24/73H01L2924/181H01L2924/00014H01L2924/00012H01L2924/014H01L2924/00H01L2224/43848
Inventor 铃木裕一郎楢崎敦司寺崎芳明
Owner MITSUBISHI ELECTRIC CORP
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