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Semiconductor epitaxy structure and its growth method

An epitaxial structure, semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as device performance impact, and achieve the effect of avoiding cracking effects

Active Publication Date: 2015-11-25
ENKRIS SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These defects can have fatal effects on the performance of the device

Method used

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  • Semiconductor epitaxy structure and its growth method
  • Semiconductor epitaxy structure and its growth method
  • Semiconductor epitaxy structure and its growth method

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Embodiment Construction

[0039] The embodiment of the present invention discloses a semiconductor epitaxial structure, including:

[0040]a nucleation layer formed on a silicon substrate;

[0041] a nitride layer formed on the nucleation layer, the nitride layer comprising a first nitride layer and a second nitride layer;

[0042] An insertion layer located between the first nitride layer and the second nitride layer, the insertion layer includes aluminum indium nitrogen, wherein the composition of indium is less than 18%.

[0043] Correspondingly, the embodiment of the present invention also discloses a method for growing a semiconductor epitaxial structure, including:

[0044] (1) Provide silicon substrate;

[0045] (2) growing a nucleation layer on the silicon substrate;

[0046] (3) growing a first nitride layer on the nucleation layer;

[0047] (4) growing an insertion layer on the first nitride layer;

[0048] (5) Growing a second nitride layer on the insertion layer.

[0049] The present ...

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Abstract

The invention discloses a semiconductor epitaxial structure and a production method thereof. The semiconductor epitaxial structure comprises a core forming layer, a nitride layer and an inserting layer, wherein the core forming layer is formed on a silicon substrate; the nitride layer is formed on the core forming layer and comprises a first nitride layer and a second nitride layer; the inserting layer is positioned between the first nitride layer and the second nitride layer; the inserting layer comprises aluminium, indium and nitrogen, wherein the content of the indium is less than 18%. The invention has the advantages that the inserting layer containing the indium is introduced into the nitride layer, and meanwhile, the whole epitaxial structure grows under the high-temperature condition, so that a great amount of defects caused by introduction of the low-temperature inserting layer are avoided, and the crystalline quality is better than the result of the low-temperature inserting layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a semiconductor epitaxial structure and a growth method thereof. Background technique [0002] Gallium Nitride, the third-generation wide bandgap semiconductor material, has the characteristics of large bandgap, high electron saturation drift velocity, high breakdown field strength, and good thermal conductivity. high frequency, high voltage and high power devices. Gallium nitride devices have good application prospects in high-frequency and high-power microwave devices. Since the 1990s, the development of gallium nitride devices has been one of the hot spots in the research of electronic devices. [0003] It is very difficult to grow GaN epitaxial films on silicon substrates due to the huge lattice mismatch and thermal mismatch between silicon materials and nitrides. First, aluminum nitride needs to be grown to prevent the reaction between the gallium atoms ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/20H01L21/20
Inventor 程凯
Owner ENKRIS SEMICON