Transparent conductive articles
A kind of product, electromagnetic technology, applied in the field of transparent conductive products, can solve the problem of material conductivity reduction, achieve high thermal conductivity and reduce environmental damage
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Embodiment 1
[0031] Multiple CLEARTRAN TM Samples of transparent zinc sulfide products, obtained from Rohm and Haas Electronic Materials, Inc., Marlborough, MA, were coarsely ground, ground and Each sample was polished to have a diameter of 2.5 cm and a thickness of 6 mm, resulting in a chipping / gouging ratio of 80 / 50. Samples were then cleaned using reagent grade acetone followed by 70 wt% methanol.
[0032] A substrate having a copper film with a thickness of 1 mm was set in a conventional physical vapor deposition furnace and heated to 1000°C. Methane was passed into the furnace at a flow rate of 70 sccm under a growth pressure of 0.5 Torr for 15 minutes to form graphene with a thickness of 4 layers on each copper film. The furnace was then cooled at a rate of 18°C / min, and when the graphene-coated copper film reached room temperature, it was removed from the furnace.
[0033] Poly(methyl methacrylate), available from MicroChem Corp, Newton, MA, was diluted 1:1 by volume with anisole...
Embodiment 2
[0036] Multiple TUFTRAN TM A sample of the laminate was obtained from Rohm and Haas Electronic Materials, Marlborough, MA. Coarse grinding was performed by conventional equipment with alumina abrasive grains with an average diameter in the range of 0.05-9 um, ground and polished so that each sample had a diameter of 2.5 cm and a thickness of 6 mm, resulting in a cut / dug ratio of 80 / 50. Samples were then cleaned using reagent grade acetone followed by 70 wt% methanol.
[0037]A substrate having a copper film with a thickness of 1 mm was set in a conventional physical vapor deposition furnace and heated to 1000°C. Methane was fed into the furnace at a flow rate of 70 sccm under a growth pressure of 0.5 Torr for 20 minutes to form 6 layers of graphene on each copper film. The furnace was then cooled at a rate of 18°C / min, and when the graphene-coated copper film reached room temperature, it was removed from the furnace.
[0038] Poly(methyl methacrylate), available from Microc...
Embodiment 3
[0041] Graphene with a thickness of 6 layers was formed on a CVD zinc selenide article by the method as described in Example 2 so that the article had a diameter of 2.5 cm and a thickness of 6 mm. The graphene-coated article was placed in a conventional CVD chamber and the zinc metal was placed in the retort of the CVD chamber and the retort temperature setting was raised to 575°C. The cavity is evacuated and heated to 300°C. Argon gas was flowed into the chamber at a flow rate of 113 slpm, while the temperature of the chamber was raised to 600°C. Hydrogen sulfide gas was then introduced into the chamber at a flow rate of 9 slpm, and the hydrogen sulfide and argon gas flow was continued for 12 hours. The temperature in the chamber was then raised to 690°C and the pressure was in the range of 40 to 60 Torr. The temperature of the still was raised from 575°C to 660°C and zinc metal vapor was produced with a target flow rate of 12 slpm. Keep hydrogen sulfide and argon flowing ...
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