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Ion beam current signal amplifier and its manufacturing method

A signal amplifier and ion beam technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficult to respond, distinguish, and record the current in the tube, and achieve the effect of improving the measurement signal-to-noise ratio

Active Publication Date: 2015-10-28
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When DNA molecules or differently charged ions pass through the nanopore (used for rapid DNA recognition or ion efficient screening), the ion beam current in the nanopore will change, due to the nanoscale effect, the molecules or ions pass through The speed of the pipeline is very fast, which causes the change of the ion beam current in the tube to be very fast. The bandwidth of the existing amplifier is usually in the KHz range, and it is difficult to respond, distinguish, and record the current change in the tube. , amplification, the bandwidth of the amplifier needs to be at least above MHz

Method used

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  • Ion beam current signal amplifier and its manufacturing method
  • Ion beam current signal amplifier and its manufacturing method
  • Ion beam current signal amplifier and its manufacturing method

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no. 1 Embodiment approach

[0024] The first embodiment of the method of the present invention is provided below, including the following steps: step S10, providing a supporting substrate, the supporting substrate is made of crystal material; step S11, providing a growth substrate; step S12, using The chemical vapor deposition method prepares a two-dimensional crystal film layer on the growth substrate; step S13, placing the growth substrate in the corrosion solution of the growth substrate, so that the two-dimensional crystal film is peeled off from the growth substrate and floats on the liquid surface On; step S14, use the support surface of the support substrate to pick up the two-dimensional crystal film from the solution, the surface tension of the two-dimensional crystal film layer material makes the two-dimensional crystal film spread and adsorb on the support substrate to form a two-dimensional crystal Thin film covering layer; step S15, using ion beam etching technology to process the two-dimensi...

no. 2 Embodiment approach

[0032] Next, the second embodiment of the method of the present invention is provided, which includes the following steps: step S20, providing a supporting substrate, and the supporting substrate is made of a crystal material; step S21, providing a graphite sheet; step S22, The two sides of the graphite sheet are pasted with an adhesive film; step S23, tearing the adhesive film to divide the graphite sheet into two; step S24, repeating steps 22 and 23 to make the graphite sheet thinner and thinner, and finally obtain a graphene film; step S25, transferring the graphene film to the supporting substrate, thereby covering the graphene film covering layer on the supporting substrate; Step S26, utilizing ion beam etching technology, processing the graphene film covering layer into regular strips Array structure; step S27, using FIB technology to prepare nanopores along the direction perpendicular to the contact surface of the support substrate and the graphene film covering layer. ...

no. 3 Embodiment approach

[0040] Next, the third embodiment of the method of the present invention is provided, which includes the following steps: Step S30, providing a supporting substrate, the supporting substrate is made of crystal material; Step S31, providing a growth substrate; Step S32, The method of chemical vapor deposition is used to prepare a two-dimensional crystal film on the growth substrate; step S33, coating an adhesion layer on the two-dimensional crystal film to form a composite film layer of the adhesion layer and the two-dimensional crystal film; step S34, applying The growth substrate is placed in a chemical etching solution that can corrode the growth substrate, so that the composite thin film layer is peeled off from the growth substrate and floats on the liquid surface; step S35, embossing the composite thin film layer on the supporting surface of the supporting substrate ; Step S36, removing the adhesive layer, thereby forming a two-dimensional crystal thin film covering layer ...

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Abstract

The invention provides an ion beam current signal amplifier. The ion beam current signal amplifier comprises a support substrate and a two-dimensional crystal thin film covering layer covered on the surface of the support substrate, a nanopore is formed along the direction which is vertical to the surface of the support substrate, which is in contact with the two-dimensional crystal thin film covering layer, the nanopore penetrates through the support substrate and the two-dimensional crystal thin film covering layer, and the nanopore allows ions to pass through. The ion beam current signal amplifier provided by the invention has the advantages that the field effect transistor (EFT) effect formed by the two-dimensional crystal thin film covering layer covered on the surface of the support substrate is utilized for amplifying weak pA level signals of ion beam current, which penetrate through the nanopore by a plurality of times so as to improve the measurement signal-to-noise ratio. The ion beam current signal amplifier provided by the invention plays an important role in high-performance detection of ion signals in micro-nano semiconductor microfluidic devices.

Description

technical field [0001] The invention relates to the technical field of micro-nano current devices and processes, in particular to an ion beam current signal amplifier and a manufacturing method thereof. Background technique [0002] Since the substances in the nanopores will exhibit novel properties different from those of the macroscopic ones, various nanodevices based on nanopores have great application prospects in biosensing, diagnosis, and separation. These novel applications stem from a very simple concept: pass a single molecule through a nanoscale pore, and the molecules that can pass through the nanopore can be detected, thereby realizing the functions of sensing and diagnosis, and the molecules that cannot pass through separate functions. [0003] Nanopores can be composed of inorganic solid state, biological or biomimetic materials. Biological pores are protein molecules, and it is quite difficult to extract large quantities of such complex protein molecules and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/772H01L29/06H01L21/335
Inventor 弓晓晶王建峰徐科刘争晖徐耿钊
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI