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Thin-film solar cell composite back electrode utilizing polymers as substrate and preparation method

A technology for solar cells and back electrodes, which is used in circuits, electrical components, and final product manufacturing, etc., can solve the problems of large surface roughness, high resistivity, and can not meet the requirements of metal back electrodes for thin-film solar cells, and achieves sputtering. The effect of shorter time, lower surface resistance, material usage and energy saving

Active Publication Date: 2013-01-16
宣城开盛新能源科技有限公司
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Problems solved by technology

Studies have shown that in the magnetron sputtering process, using high working pressure and low sputtering power, the residual tensile stress of the metal Mo film and the adhesion of the substrate are good, but the resistivity is large and the surface roughness is large, which cannot meet the requirements of the film. Requirements for Metal Back Electrodes of Solar Cells

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  • Thin-film solar cell composite back electrode utilizing polymers as substrate and preparation method
  • Thin-film solar cell composite back electrode utilizing polymers as substrate and preparation method
  • Thin-film solar cell composite back electrode utilizing polymers as substrate and preparation method

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Embodiment Construction

[0021] The structural features and process of the present invention will be described in detail with a specific embodiment below in conjunction with the accompanying drawings.

[0022] In this embodiment, a 100nm thick high-resistance residual tensile stress metal Mo film 2, a 500nm thick low resistance residual compressive stress metal Mo film 3, a 25nm thick low-resistance compressive stress metal Mo film 3, and a 25nm thick low-residual compressive stress metal Mo film are sequentially sputtered on a flexible polymer substrate 1 by magnetron sputtering. High-resistance reflective residual compressive stress metal Mo thin film 4.

[0023] The specifications of the magnetron sputtering target used: the target is a circular metal Mo target with a diameter of 3 inches, the purity is greater than 99.95%, and the distance between the surface of the sputtering target and the surface of the substrate is 100mm. The background vacuum of the sputtering vacuum chamber is about 10 -5 P...

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Abstract

The invention discloses a thin-film solar cell composite back electrode utilizing polymers as a substrate and a preparation method. The thin-film solar cell composite back electrode comprises a high-resistance residual tensile stress metal Mo film, a low-resistance residual pressure tensile metal Mo film and a low-resistance high-reflection residual pressure stress metal Mo film which sequentially grow on a flexible polymer substrate. The preparation method includes changing magnetic-control sputtering parameters to realize good binding performance of the composite metal Mo back electrode and the flexible polymer substrate. Radiation reflection rate of incidence light is high, and meanwhile, failure of the flexible polymer substrate caused by high-performance sputtering is avoided, and the surface resistance of the metal Mo composite back electrode can meet the requirements of thin-film solar cells.

Description

technical field [0001] The invention relates to a semiconductor thin film solar cell, in particular to a composite back electrode grown on a flexible polymer substrate and a preparation method thereof. Background technique [0002] In the semiconductor thin film solar cell structure with the lower layer configuration, rational selection of the back contact layer and the back electrode is one of the key factors to reduce the back contact barrier, form a good ohmic contact, and improve the open circuit voltage and fill factor. Taking flexible cadmium telluride (CdTe) thin film solar cells as an example, the selection requirements for the back electrode mainly consider the following aspects: (1) High work function metal material, which is the requirement for the back electrode metal to form an ohmic contact with the CdTe film. Because the work function of the p-CdTe material is about 5.78eV, if the work function of the back electrode metal material is too low, a Schottky barrie...

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18C23C14/34
CPCY02P70/50
Inventor 张传军曹鸿邬云华赵守仁王善力褚君浩
Owner 宣城开盛新能源科技有限公司
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