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How to Erase Serial Flash Memory

A memory and serial technology, which is applied in the erasure field of flash memory, and can solve problems such as excessive erasure

Active Publication Date: 2016-03-16
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this will cause virgin sectors to be over-erased during block erase

Method used

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  • How to Erase Serial Flash Memory
  • How to Erase Serial Flash Memory
  • How to Erase Serial Flash Memory

Examples

Experimental program
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Embodiment Construction

[0016] Figure 1A It is a schematic diagram showing a block 100 of the SPI flash memory according to an embodiment of the present invention. Such as Figure 1A As shown, the block 100 may include N sectors SEC1, SEC2, . . . , SECN, where N is a positive integer, usually 16.

[0017] Figure 1B is a schematic diagram showing the sector SEC1 according to an embodiment of the present invention. Such as Figure 1B As shown, the sector SEC1 may include a plurality of byte storage units BU1, BU2, . . . , BUM, where M is a positive integer, and each byte storage unit includes 8 (1 byte) storage units. It is worth noting that although Figure 1B Only sector SEC1 is shown, in fact all N sectors SEC1 , SEC2 , . . . , SECN include a plurality of byte storage units BU1 , BU2 , .

[0018] Figure 2A , Figure 2B It is a flowchart 200 showing a serial flash memory erasing method according to an embodiment of the present invention. Firstly, in step S210, a block 100 to be erased is pr...

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PUM

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Abstract

The invention discloses an erase method of a serial flash memory. The method at least comprises the following steps: providing a block to be erased, wherein the block comprises N sectors; executing a pre-stylization program of the block; applying an erase pulse to the block; selecting the first of the N sectors as the sector to be tested; judging whether the sector to be measured passes a sector erase verification; examining a plurality of byte memory cells of the sector to be tested and storing the sector address of the sector to be tested in a temporary memory if so; and selecting the second of the N sectors to update the sector to be measured, examining the temporary memory, erasing the negative bias of a plurality of word lines of sector passing through the sector erase verification in the N sectors, and applying the erase pulse to the block if not.

Description

technical field [0001] The present invention relates to a method for erasing a flash memory (flash memory), in particular to a method for erasing a serial flash memory (serial flash memory). Background technique [0002] A serial peripheral interface flash (SPIFlash) has a plurality of blocks, each block includes a plurality of sectors, and each sector includes a plurality of storage units (cells). When block erasing is performed, except for the protected area, the p-well and wordline of each sector will be applied with a negative bias at the same time. Then, after the erasing pulse, it is checked one by one whether all memory cells in each sector are successfully erased. [0003] The SPI flash memory can perform block erase, that is, erase all sectors in a block at the same time. There is an upper limit to the number of times a sector can be erased, usually more than 100,000 times. After multiple erases, some sectors may wear out. These worn sectors require more erase p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/14G11C16/02
Inventor 柳弼相
Owner WINBOND ELECTRONICS CORP
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