Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Layered silicon nitride SiNxOy film forming method applied to transparent material

A technology of transparent material and film forming method, which is applied in the field of surface decoration technology, can solve the problem of no transparent material transmittance, etc., and achieve the effect of reducing reflection and improving transmittance

Inactive Publication Date: 2013-02-27
TIANJIN ZHONGHUAN HI TECH
View PDF2 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to improve this situation, there is a need for a new process that uses common materials instead of substances containing rare metal Nb to form a film on the surface of transparent materials, such as using silicon nitride SiNxOy to form a film. Now all domestic manufacturers use targets containing rare metal Nb , to reduce the reflection of transparent materials by sputtering. At present, there are no reports in the domestic literature on the use of layered SiNxOy film-forming technology on the surface of transparent materials, and there is no application of layered SiNxOy film-forming technology to improve the transmittance of transparent materials and Reporting of reduced reflection data

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Layered silicon nitride SiNxOy film forming method applied to transparent material
  • Layered silicon nitride SiNxOy film forming method applied to transparent material
  • Layered silicon nitride SiNxOy film forming method applied to transparent material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] In order to understand the present invention more clearly, describe the present invention in detail in conjunction with accompanying drawing and embodiment:

[0034] Such as Figure 1-8 As shown, different substrate materials can be selected in the implementation of this method; for example

[0035] Figure 4 The plain transparent material substrate 1 shown does not have any other layers on the substrate and is mostly made of glass.

[0036] Figure 5 The plain transparent material base 5 of shown band transparent conductive film layer 51 is to deposit the transparent conductive film layer 51 with pattern on the plain transparent material; obtained by processing on a material substrate.

[0037] press respectively figure 1 , figure 2 and image 3 layered structure, the first SiO was prepared by depositing a thin film 2 Film layer 2, the second SiO 2 Film layer 3 and SiNxOy film layer; During the implementation of the present invention, SiO 2 layer, SiN...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to View More

Abstract

The invention relates to a layered silicon nitride SiNxOy film forming method applied to transparent glass, which is characterized in that a transparent material is used as a substrate material and two SiO2 film layers and a SiNxOy film layer are deposited on the surface of the substrate material by adopting a thin film deposition method; and by the matching design of a SiNxOy layer and SiO2 layer optical film system and the film formation of layered silicon nitride SiNxOy, the transmittance of a transparent glass finished product is improved and the reflectivity of the transparent glass finished product is reduced. Compared with the prior art, the film forming method provided by the invention achieves the effects of improving the transmittance and reducing the reflection on the transparent material, ensures the matchingo design of the film system containing the SiNxOy layer and the SiO2 layers, which is implemented by adopting a more cheap and more convenient target material containing an element Si, to achieve the effect of reducing the reflection. and is mainly used for the photoelectric industries of a touch screen, a thin film battery and a thin film switch.

Description

technical field [0001] The present invention relates to surface decoration technology, in particular to a layered silicon nitride SiNxOy film-forming method applied to transparent materials, which uses layered SiNxOy film-forming instead of traditional shadow-eliminating ITO (Nb2O5) films to improve the penetration of transparent material products Ratio, reduce reflectivity, and achieve the effect of eliminating the reflective bright spots of the ITO (transparent conductive film) conductive layer visually. Background technique [0002] With the wide application of touch screens in technology, business and daily life, the use of touch screens is increasing, especially in the high-end and high-end markets. The good user experience of high-transmittance and high-sensitivity touch screens has prompted everyone to use high-transmission touch screens. High efficiency, high sensitivity and other characteristics for research and development. [0003] In the prior art, th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
Inventor 彭钰李冬郭元元
Owner TIANJIN ZHONGHUAN HI TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products