Unlock instant, AI-driven research and patent intelligence for your innovation.

Wiring structure of indium tin oxide (ITO)

A wiring structure and curve technology, applied in the field of double-layer ITO wiring structure, can solve the problems of glare, unclear display of ITO wiring structure, and inability to self-shield noise, etc., and achieve the effect of improving the signal-to-noise ratio.

Inactive Publication Date: 2013-02-27
SUZHOU PIXCIR MICROELECTRONICS
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is the problem of unclear display and glare caused by the ITO wiring structure, and the problem of not being able to self-shield noise

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wiring structure of indium tin oxide (ITO)
  • Wiring structure of indium tin oxide (ITO)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0008] The present invention will be further described below with reference to the drawings and embodiments.

[0009] Such as figure 1 with figure 2 Shown is a schematic diagram of the ITO wiring structure of the present invention. It is a double-layer structure and includes a plurality of first sensing electrodes 1 and a plurality of second sensing electrodes 2. The first sensing electrodes 1 are arranged in parallel in the first direction. The second sensing electrodes 2 are arranged in parallel in a second direction, and the first direction is perpendicular to the second direction. A number of floating blocks 3 are filled between the first sensing electrodes 1, and there are gaps between the floating blocks 3. The increase of the floating blocks can improve the linearity.

[0010] The first sensing electrode 1 includes a plurality of sensing electrode sections 10, the sensing electrode sections 10 are sequentially joined in a first direction, and the two side edges 11 of the s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A wiring structure of an indium tin oxide (ITO) comprises a plurality of first sensing electrodes parallelly arranged in the first direction and a plurality of second sensing electrodes parallelly arranged in the second direction, wherein each first sensing electrode comprises a plurality of sensing electrode sections spliced in sequence, the edges of the sensing electrode sections extending in the first direction are curved, and the second sensing electrodes are rectangular and located under the first sensing electrodes. By means of the design of the curved edges of the first sensing electrodes, the problems of unclear displaying and glaring caused by the fact that an ITO layout structure is displayed completely are solved, and the second sensing electrodes are located under the first sensing electrodes, so that a self-shielding effect can be played, and the signal to noise ratio is improved.

Description

Technical field [0001] The invention relates to an ITO wiring structure, in particular to a double-layer ITO wiring structure. Background technique [0002] At present, touch screens are widely used in the fields of instrumentation, computers, electronic watches, game consoles and household appliances. The touch screen usually includes a display layer and a touch layer on the display layer. The touch layer is usually made of indium tin oxide ITO. An existing ITO wiring structure includes a plurality of first touch electrodes arranged horizontally and a plurality of second touch electrodes arranged vertically. The first touch electrodes are connected horizontally, and the second touch electrodes are vertically arranged. Connected, the first touch electrode and the second touch electrode are both hexagonal, and the horizontal width of the first touch electrode is greater than the vertical width, and the vertical width of the second touch electrode is greater than the horizontal...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F3/041
Inventor 杜小雷
Owner SUZHOU PIXCIR MICROELECTRONICS