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Wet etching device and etching method

A technology of wet etching and waiting to be etched, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as low etching precision and instability of batch wafer etching

Active Publication Date: 2013-02-27
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The present invention aims at defects such as low etching precision and instability of different batches of wafer etching caused by traditional wet etching devices in the prior art, which are easily affected by factors such as etching rate and etching solution concentration. A wet etching device is provided

Method used

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  • Wet etching device and etching method
  • Wet etching device and etching method
  • Wet etching device and etching method

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Experimental program
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Effect test

no. 1 approach

[0031] see figure 1 , figure 1 Shown is a schematic structural diagram of the first wet etching device of the present invention. The first wet etching device 1 includes a first etching tank 12 containing the etching solution 11, a transparent observation window 121 is provided on one side of the first etching tank 12; a film thickness testing device 13, The film thickness testing device 13 adopts an optical measurement mode, and is arranged on the side of the observation window 121 of the first etching groove 12, and can measure the to-be-treated material located in the first etching groove 12 through the observation window 121. The designated position to be measured of the etched wafer 10 is positioned, and the film thickness of the designated position to be measured of the wafer 10 to be etched is monitored in real time during the etching process; the etching control device 14, the etching The control device 14 has a predetermined preset film thickness, and can monitor the...

no. 2 approach

[0043] The difference between the second embodiment and the first embodiment is that the film thickness testing device of the second wet etching device is accommodated in the etching solution of the second etching tank for the The specified test position of the etched wafer is positioned and the film thickness is monitored in real time. The components in the second embodiment that are the same as those in the first embodiment are numbered with the same numbers, and the same working principle will not be repeated.

[0044] see image 3 , image 3 Shown is a schematic structural diagram of the second wet etching device of the present invention. The second wet etching device 2 includes a second etching tank 21 containing the etching solution 11; a film thickness testing device 13, the film thickness testing device 13 adopts an optical measurement mode, and is arranged on the first In the etching solution 11 of the second etching tank 21, the designated position to be measured ...

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Abstract

A wet etching device comprises an etching groove, a film thickness testing device and an etching control device. The film thickness testing device adopts an optical measurement mode, performs positioning on an appointed to-be-tested position of a to-be-etched wafer in the etching groove, and performs real-time monitoring on film thickness of the appointed to-be-tested position of the to-be-etched wafer during the etching process. The etching control device is provided with a pre-arranged preset film layer thickness, and can compare an actual film thickness monitored at the appointed to-be-tested position of the to-be-etched wafer through the film thickness testing device with the pre-arranged preset film layer thickness. The wet etching device overcomes shortcomings of etching rate change brought by etching solution solubility change, and shortcomings of inconsistent film thickness of wafers brought by former technologies; enables etched film thickness of wafers of each batch to be consistent with a set value, and accordingly achieving the aim of accurately controlling etching quantity and mending instability of etching quantity of different-batch wafers.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wet etching device and an etching method thereof. Background technique [0002] The semiconductor manufacturing process is a planar manufacturing process, which combines photolithography, etching, deposition, and ion implantation processes. It needs to form a large number of various types of complex devices on the same substrate and connect them to each other to have a complete electrical performance. Among them, any deviation in the process will cause the performance parameters of the circuit to deviate from the design value. At present, as the device feature size of VLSI continues to shrink and the integration level continues to increase, higher requirements are placed on the control of each step of the process and the accuracy of the process results. [0003] Taking the etching process as an example, in the manufacture of integrated circuits, it is often necessary t...

Claims

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Application Information

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IPC IPC(8): H01L21/311H01L21/66
Inventor 邓镭
Owner SHANGHAI HUALI MICROELECTRONICS CORP