Transparent conductive film, method for manufacturing a transparent conductive film, dye-sensitized solar cell, and solid-electrolyte cell
A technology of a transparent conductive film and a manufacturing method, applied in non-aqueous electrolyte storage batteries, electrode manufacturing, battery electrodes, etc., can solve the problems of human body danger, high cost, device performance deterioration, etc., and achieve the effect of low-toxicity supply
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no. 3 approach
[0061] A solid electrolyte battery according to a third embodiment of the present invention will be described below. The solid electrolyte battery is a battery using the transparent conductive film of the first embodiment. In the solid electrolyte battery, the transparent conductive film of the first embodiment is used not only as a conductive agent but also as an anode active material.
[0062] figure 2 A cross-sectional structure of a solid electrolyte battery according to a third embodiment of the present invention is shown. The solid electrolyte battery is a thin film type solid electrolyte battery in which a cathode and an anode which are constituent components of the battery and materials which are constituent constituents of the electrolyte are arranged in a thin film type multilayer structure. The solid electrolyte battery is, for example, a lithium ion secondary battery: in which, when charging, lithium ions are released from the cathode and absorbed into the anode...
Embodiment 1
[0081] (preparation of target material)
[0082] For Li as powder raw material 2 CO 3 and TiO 2 were weighed in a stoichiometric ratio and mixed using a ball mill to produce a mixed powder, which was fired at 800 °C for 12 hours in air to produce Li 4 Ti 5 o 12 powder. Li 4 Ti 5 o 12 The powder was pressed and molded into pellets, followed by sintering in air at 800 °C for 6 h to generate Li 4 Ti 5 o 12 Sintered body.
[0083] (Preparation of transparent conductive film)
[0084] Use Li 4 Ti 5 o 12 The sintered body was used as a target, and a transparent conductive film was formed on a silicon wafer substrate using radio frequency (RF) magnetron sputtering equipment under the following sputtering conditions.
[0085] Sputtering conditions
[0086] Sputtering pressure: 0.5Pa
[0087] Output power: 50W
[0088] Gases: Ar, 10 sccm; and N 2 , 10 sccm
[0089] Deposition temperature: room temperature (25°C)
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