Method of fabricating recessed channel access transistor device
An access transistor, recessed technology, applied in semiconductor devices, electric solid state devices, semiconductor/solid state device manufacturing, etc., can solve problems such as influence, gate drain leakage, excessive concentration of electric field in DRAM memory cells, etc.
Active Publication Date: 2013-03-06
NAN YA TECH
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Problems solved by technology
[0004] However, in a typical RCAT device, when the drain voltage (Vd) is applied to a capacitor electrically connected to the NMOS transistor, it may have a problem of gate induced drain leakage (GIDL)
The sharp angle of the polysilicon gate and the relatively thin gate oxide design near the sharp corner of the polysilicon gate can cause excessive concentration of the electric field on the side of the DRAM memory cell
This phenomenon of electric field concentration can lead to leakage
Gate-induced-drain leakage has adverse effects on the refresh characteristics of DRAM devices
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[0025] In the detailed description that follows, reference numerals are identified as part of the accompanying drawings and are shown by way of illustration of specific examples in which the described embodiments may be practiced. Such examples will illustrate sufficient detail to enable those skilled in the art to implement them. Readers should understand that other embodiments may be utilized in the present invention or structural, logical, and electrical changes may be made without departing from the described embodiments. Accordingly, the following detailed description is not to be taken as limiting, but rather, the embodiments contained therein are defined by the terms of the appended claims.
[0026] For the manufacture of transistors and integrated circuits, as in the case of a planar process, the term "principal surface" refers to those surfaces of a semiconductor layer within or adjacent to which multiple transistors are formed. As used herein, the term "perpendicula...
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A method of fabricating a recessed channel access transistor device is provided. First, a semiconductor substrate having thereon a recess etched into a major surface is provided; a gate dielectric layer is then formed on interior surface of the recess; a recessed gate electrode is then formed in and on the recess; the recessed gate electrode comprises a recessed gate portion that is inlaid into the recess and under the major surface, and an upper gate portion above the major surface; an exposed sidewall of the recessed gate electrode is isotropically etched to thereby form a trimmed neck portion having a width that is smaller than that of the recessed gate portion, and an exposed sidewall of the trimmed neck portion is then oxidized.
Description
technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, in particular to a method of manufacturing a recessed channel access transistor (recessed channel access transistor, RCAT) device, and the gate of the channel access transistor manufactured by it is The gate induced drain leakage (GIDL) is small. Background technique [0002] As the size of semiconductor devices shrinks, the gate-channel length also shortens, which may cause short-channel effects as a result. Known methods to solve the short channel effect include reducing the thickness of the gate oxide layer or increasing the concentration of dopants. However, such methods may cause degradation of device reliability and reduce the speed of data transmission. [0003] In recent years, recessed channel access transistor devices (or RCAT devices for short) have been developed in the industry, which can increase the length of the gate channel at the physical lev...
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IPC IPC(8): H01L21/336
CPCH01L27/10876H01L29/4983H01L29/42376H01L29/66628H01L29/66621H01L21/28114H01L29/4236H10B12/053
Inventor 廖伟明张明成
Owner NAN YA TECH