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Circuit structure with resistance or capacitance and method of operation thereof

A technology of circuit structure and operation method, applied in the direction of circuits, resistors, electrical components, etc., can solve the problem of occupying chip area and achieve the effect of reducing the demand for chip area

Active Publication Date: 2015-09-23
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conventional resistors and capacitors are based on planar / horizontal design principles, which consume a lot of valuable chip area

Method used

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  • Circuit structure with resistance or capacitance and method of operation thereof
  • Circuit structure with resistance or capacitance and method of operation thereof
  • Circuit structure with resistance or capacitance and method of operation thereof

Examples

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Embodiment Construction

[0031] figure 1 A circuit structure 10 according to an embodiment of the invention is shown. The circuit structure 10 includes a semiconductor substrate 11 with shallow trench isolation 12, a first conductive region 13 disposed in the semiconductor substrate 11, a plurality of second conductive regions 15 disposed in the first conductive region 13, A plurality of third conductive regions 17 disposed in the first conductive region 13 , and a plurality of separation regions 14 disposed in the first conductive region 13 . A first depletion region 19 exists between the first conduction region 13 and the third conduction region 17 , and a second depletion region 19 ′ exists between the second conduction region 15 and the third conduction region 17 . The plurality of separation regions 14 are disposed in the first conductive region 13 to separate the plurality of second conductive regions 15 and third conductive regions 17 . According to an embodiment of the present invention, eac...

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Abstract

A circuit structure with a capacitor or a resistor includes a semiconductor substrate, a first conductive region positioned in the semiconductor substrate, a plurality of second conductive regions and third conductive regions positioned in the first conductive region, a first depletion region positioned between the first conductive region and the third conductive region, a second depletion region positioned between the second conductive region and the third conductive region, and a plurality of separating regions positioned in the first conductive region, configured to separate the second and the third conductive regions. In operation, a first voltage is applied to the separating region to control the capacitance or the resistance of the circuit structure. A second voltage is applied to the first conductive region and a third voltage is applied to the second conductive region to measure the capacitance and the resistance of the circuit structure.

Description

technical field [0001] The invention relates to a circuit structure, in particular to an adjustable resistance or capacitance. Background technique [0002] In recent years, the demand for mixed mode ICs, including data converters, analog-to-digital / digital-to-analog converters, and digital radio frequency chips, has rapidly increased. In view of the rapid development of wireless communication and network technology, these circuits further include router chips for mobile communication, software radio, local area network or wide area network. [0003] From the perspective of integrated circuit manufacturing, the semiconductor process has been committed to shrinking in size for the past four decades, and this trend is still applicable to today's technology. Among them, complementary metal-oxide-semiconductor (CMOS) technology is usually the most mature in terms of digital functions and small size, while bipolar transistors (bipolar transistors) are most often used in chips em...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/08H01L21/02
CPCH01L29/94H01L28/20
Inventor 章正欣陈逸男刘献文
Owner NAN YA TECH