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Electrostatic discharge protective circuit and driving method and display panel

An electrostatic discharge and driving method technology, which is applied to emergency protection circuit devices, emergency protection circuit devices, circuit devices and other directions for limiting overcurrent/overvoltage, and can solve the problems of low opening degree of TFTB403 and slow current leakage.

Active Publication Date: 2013-03-13
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the disadvantage is that V data When there is a positive charge on the line to be discharged, V net1 The highest voltage is limited to VGH, the opening degree of TFT B403 is low, and the current leakage slows down

Method used

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  • Electrostatic discharge protective circuit and driving method and display panel
  • Electrostatic discharge protective circuit and driving method and display panel
  • Electrostatic discharge protective circuit and driving method and display panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] see Figure 7 , an ESD protection circuit provided by an embodiment of the present invention includes:

[0048] The first thin film transistor 101, the drain of which is connected to the data signal terminal V data , the source and gate are connected as node V net , connected to the drain of the fourth thin film transistor 104;

[0049] The second thin film transistor 102, its drain is connected to the first power voltage terminal VGH, and its source is connected to the data signal terminal V data , the gate is connected to the node V net ;

[0050] The third thin film transistor 103, its drain is connected to the data signal terminal V data , the source is connected to the second power voltage terminal VGL, and the gate is connected to the third power voltage terminal VGL2;

[0051] The source and gate of the fourth thin film transistor 104 are connected to the second power voltage terminal VGL;

[0052] Bootstrap capacitor C1 is located at node V net and data ...

Embodiment 2

[0069] see Figure 10 , the ESD protection circuit provided by Embodiment 2 of the present invention includes:

[0070] The first thin film transistor 201, its drain is connected to the data signal terminal V data , the source and gate are connected as node Vnet , connected to the drain of the fourth thin film transistor 204;

[0071] The second thin film transistor 202 has its drain connected to the first power voltage terminal VGL, and its source connected to the data signal terminal V data , the gate is connected to the node V net ;

[0072] The third thin film transistor 203, whose drain is connected to the data signal terminal V data , the source is connected to the second power voltage terminal VGH, and the gate is connected to the third power voltage terminal VGH2;

[0073] The source and gate of the fourth thin film transistor 204 are connected to the second power voltage terminal VGH;

[0074] The bootstrap capacitor C2 is located at node V net and data signal ...

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Abstract

The invention discloses an electrostatic discharge (ESD) protective circuit, a display panel and a driving method for realizing low power consumption during normal work of the ESD protective circuit and charge quick release during ESD, so as to maintain the safety of a pixel circuit inside the display panel. The ESD protective circuit provided by the invention comprises a first thin film transistor, the drain electrode of which is connected to a data signal end, and the source and gate electrodes are connected as a node; a second thin film transistor, the drain electrode of which is connected to a first power voltage end, and the source electrode is connected to the data signal end, and the gate electrode is connected with the node; a third thin film transistor, the drain electrode of which is connected to the data signal end, the source electrode is connected to a second power voltage end, and the gate electrode is connected to a third power voltage end; a fourth thin film transistor, the drain electrode of which is connected to the node, and the source and gate electrodes are connected with the second power voltage end; and a bootstrap capacitor connected between the node and the data signal end.

Description

technical field [0001] The invention relates to the fields of liquid crystal display and organic light-emitting display, in particular to an electrostatic discharge protection circuit, a driving method, and a display panel of a light-emitting device. Background technique [0002] The electrostatic discharge (electro-static discharge, ESD) protection circuit is an important part of the thin-film transistor TFT liquid crystal display LCD and the emerging organic light-emitting display AMOLED panel, which can protect the display device from static electricity during production, transportation and work. harm. Such as figure 1 shown in the structure, for generally only V com Line TFT LCD, and in the panel with VGH line and VGL line, generally there is a panel with gate drive, the structure is as follows figure 2 shown in . figure 1 The principle of the ESD protection circuit in the panel shown in is: During normal operation, V data (or V gate ) only leakage current or a sm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1362G09G3/36
CPCH02H9/046H02H9/044G02F1/136204
Inventor 段立业吴仲远
Owner BOE TECH GRP CO LTD
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