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Methods of Forming Semiconductor Structures

A technology of semiconductors and precursors, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of high cost and high cost of transistors

Active Publication Date: 2016-08-03
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, high electron mobility transistors based on III-V elements are costly to fabricate by employing conventional III-V processes
For example, traditional III-V processes require metal formation by evaporation and gold-containing ohmic structures, all of which can be very expensive

Method used

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  • Methods of Forming Semiconductor Structures
  • Methods of Forming Semiconductor Structures
  • Methods of Forming Semiconductor Structures

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Embodiment Construction

[0028] The making and using of exemplary embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are exemplary only, and do not limit the scope of the invention.

[0029] exist figure 1 A cross-sectional view of a semiconductor structure 100 is shown in , which reflects at least one embodiment of the present invention. figure 2 is a flowchart of a method 200 of forming a semiconductor structure having GaN high mobility transistors in accordance with one or more embodiments of the present invention. Figure 3 to Figure 12 is based on figure 2 Some embodiments of the method 200 form cross-sectional views of the semiconductor structure 100 having GaN high mobility transistors at various stages of fabrication. It should be noted that in figure 2 Other processes may be provided before, during, o...

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Abstract

A semiconductor structure is disclosed. The semiconductor structure includes a first layer. The second layer is disposed on the first layer and is compositionally different from the first layer. An interface exists between the first layer and the second layer. The third layer is disposed on the second layer. A gate is provided on the third layer. A source feature and a drain feature are disposed on opposite sides of the gate. Both the source feature and the drain feature include respective metal features at least partially embedded in the second and third layers. A corresponding intermetallic compound is located underneath each metallic component. The intermetallics all contact the carrier channels located at the interface. The invention also provides a method of forming a semiconductor structure.

Description

technical field [0001] The present invention relates generally to methods of fabricating semiconductor structures, and more particularly to a method of fabricating high electron mobility transistors. Background technique [0002] In semiconductor technology, due to their properties, high electron mobility transistors based on group III-V elements have many attractive properties, including high electron mobility and the ability to transmit signals at high frequencies, among others. [0003] However, high electron mobility transistors based on III-V elements are expensive to fabricate by employing conventional III-V processes. For example, traditional III-V processes require the formation of metals by evaporation and the use of gold-containing ohmic structures, all of which can be very expensive. Therefore, there is a need to develop a process by which transistors based on group III-V elements can be fabricated using existing silicon fabrication tools. Contents of the inven...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/335H01L21/28H01L29/778H01L29/45
CPCH01L29/7787H01L29/2003H01L29/66462H01L29/205H01L29/778H01L29/7784
Inventor 陈柏智余俊磊姚福伟许竣为杨富智蔡俊琳
Owner TAIWAN SEMICON MFG CO LTD