hemt device and method of making the same

Abstract

The invention discloses a high electron mobility transistor (HEMT) component and a manufacture method of the HEMT component. The HEMT component can be used for a Ka wave band or a higher frequency range. The manufacture method comprises the steps of providing a substrate comprising an under layer, a buffer layer, an epitaxial layer, a cover layer, a source electrode, a drain electrode and a passivation layer, forming a grid groove in the surface of the substrate, wherein the grid groove penetrates through the passivation layer and the cover layer and is deeply inserted into the surface of the epitaxial layer, forming a T-shaped grid on the bottom face of the grid groove, forming a certain gap between the grid foot edge of the T-shaped grid and the side wall of the grid groove of the T-shaped grid, enabling the lower surface of a grid cover to be higher than the upper surface of the passsivation layer, and forming a certain gap between the lower surface of the grid cap and the upper surface of the passivation layer. Due to the facts that a grid foot and the grid cover of the T-shaped grid are both not directly contacted with a medium of the passviation layer, and the certain gap is reserved, and therefore a stray capacitance generated between the grid and the medium is substantially reduced and even eliminated, a grid source capacitance and a grid drain capacitance of the component are decreased, a cut-off frequency and a highest oscillation frequency of the component are increased, the component is enabled to work under the Ka wave band and the higher frequency range, and power characteristics of the component are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, to a HEMT device and a manufacturing method thereof. Background technique [0002] Millimeter-band power amplifiers have great application prospects in military, commercial and consumer fields. High-frequency broadband wireless communication technology, precision guided weapons, long-range radar and space communication technology, the working frequency band is gradually developing from C and X bands to higher frequency bands such as Ku and Ka. [0003] As a third-generation semiconductor material, GaN materials have the advantages of wide bandgap, high breakdown electric field, and large output power, and the on-resistance of GaN materials when working under high voltage makes GaN-based power devices also show better performance. high gain. At the same time, GaN-based power devices have high electron mobility and electron saturation rate, which ensures...

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Problems solved by technology

[0011] In actual use, it is found that the GaN-based HEMT device (that is, the GaN-based microwave power die) with the above structure has achieved good power output characteristics in the Ku-band and below the Ku-band, but when it is applied in the Ka-band and above When the frequency performance of the device is reduced, it is difficult for the above-mentioned device to work in the Ka-band and above frequency bands

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