Unlock instant, AI-driven research and patent intelligence for your innovation.

Impregnation liquid, impregnation method before wafer etching, and silicon dioxide wet etching method

A technology of wet etching and wetting liquid, which is applied in the direction of surface etching compositions, chemical instruments and methods, electrical components, etc., can solve the problems of prolonged circulation time, corrosion without staining, high corrosion rework rate, etc., to reduce corrosion abnormalities The effect of reducing the rate and reducing the wafer scrap rate and reducing the dyeing abnormality

Active Publication Date: 2015-02-25
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] After silicon dioxide wet etching, the abnormal rate of the wafer is high, and the problem of non-etching or non-etching staining has not been effectively solved, and additional etching or overlaying is required. The rework rate of etching is high, resulting in increased production costs and extended delivery time. , and even some product wafers are scrapped or affect product performance and yield due to severe corrosion
This method is only suitable for the negative glue process with wide etching lines

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Mix DRIWEL wetting stock solution and water at a volume ratio of 1:15 to prepare a wetting solution. Wet the wafer as follows:

[0027] (a) Immerse the wafer in the prepared immersion solution for 1 second;

[0028] (b) Lifting the wafer from the immersion solution;

[0029] (c) After 1 second, immerse the wafer in the immersion solution for 1 second;

[0030] (d) Execute step b and step c again;

[0031] (e) Lifting the wafer out of the immersion solution.

[0032] Afterwards, wet etching is performed on the processed wafer.

[0033] Staining abnormalities were reduced (71%) compared to wafers that were directly subjected to wet silica etch without wetting.

Embodiment 2

[0035] Mix DRIWEL wetting stock solution and water at a volume ratio of 1:20 to prepare the infiltration solution. Wet the wafer as follows:

[0036] (a) Immerse the wafer in the prepared immersion solution for 3 seconds;

[0037] (b) Lifting the wafer from the immersion solution;

[0038] (c) After 2 seconds, immerse the wafer in the immersion solution for 1 second;

[0039] (d) Perform steps b and c four times again;

[0040] (e) Lifting the wafer out of the immersion solution.

[0041] Afterwards, wet etching is performed on the processed wafer.

[0042] Compared to wafers that were directly subjected to wet silica etch without wetting, staining anomalies were reduced by 80%.

Embodiment 3

[0044] Mix DRIWEL wetting stock solution and water at a volume ratio of 1:25 to prepare a wetting solution. Wet the wafer as follows:

[0045] (a) Immerse the wafer in the prepared immersion solution for 5 seconds;

[0046] (b) Lifting the wafer from the immersion solution;

[0047] (c) After 2 seconds, immerse the wafer in the immersion solution for 2 seconds;

[0048] (d) Perform steps b and c seven times again;

[0049] (e) Lifting the wafer out of the immersion solution.

[0050] Afterwards, wet etching is performed on the processed wafer.

[0051] Compared to wafers that were directly subjected to wet silica etch without wetting, staining anomalies were reduced by 85%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides an impregnation liquid, an impregnation method before wafer etching, and a silicon dioxide wet etching method. The impregnation liquid comprises a DRIWEL wetting raw liquid and deionized water. The wafer impregnation treatment before wet etching is suitable for all product wafers adopting positive photoresists and negative photoresists.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an immersion solution and an immersion method used in a wet silicon dioxide etching process. Background technique [0002] In the wet silicon dioxide etching in the semiconductor manufacturing process, due to the hydrophobicity of the photoresist, the direct etching of the wafer is prone to the phenomenon that the local etching of the window to be etched is not white, and the entire window or local silicon dioxide is not etched. It's called chromosomal abnormalities. [0003] After silicon dioxide wet etching, the abnormal rate of the wafer is high, and the problem of non-etching or non-etching staining has not been effectively solved, and additional etching or overlaying is required. The rework rate of etching is high, resulting in increased production costs and extended delivery time. , and even some product wafers are scrapped or affect product performance and yield...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K13/00H01L21/306
Inventor 朱国伟宋矿宝
Owner WUXI CHINA RESOURCES HUAJING MICROELECTRONICS