A kind of overlapping method of c-shaped silicon core

Abstract

The invention discloses a C-shaped silicon core lap joint method, and belongs to lap joint technologies. A horizontal C-shaped silicon core (1) and vertical C-shaped silicon cores (5) are used in the method. Two ends of the horizontal C-shaped silicon core (1) are respectively connected with the upper ends of the two vertical C-shaped silicon cores (5) in a mortice-and-tenon-joint or inserting or clamping mode to form a II-shaped structure. The strength of the C-shaped silicon cores is far larger than that of a cylinder structure of a solid silicon core and a square silicon core. After the strength of the C-shaped silicon cores is improved, lodging resistance of the C-shaped silicon cores is far better than that of the existing solid silicon core. Compared with the solid silicon core, the C-shaped silicon cores have the advantages of having the same weight basically and the diameter which is far larger than that of the solid silicon core. The method is original and basic.

Description

【Technical field】 [0001] The invention belongs to the lap joint technology of silicon cores, in particular to a lap joint method of C-shaped silicon cores or other crystal materials. 【Background technique】 [0002] It is known that the silicon core bonding technology is a very important technology in the process of producing polysilicon by the Siemens method, and it is mainly used in a link of polysilicon production, that is, the reduction reaction process. The principle of the reduction reaction process is: the reduction reaction is carried out in a closed reduction furnace, and several closed loops are formed by lapping silicon cores in the reduction furnace before loading the furnace, which is the "bridge" in the jargon. "; each closed circuit is formed by two vertical silicon cores and a horizontal silicon core to form a "∏"-shaped structure; the two vertical silicon cores of each closed circuit are respectively connected to two electrodes on the bottom of the furnace, a...

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Problems solved by technology

[0007] At present, there are wire-cut square silicon cores on the market. Due to the wire-cutting process, the crystal is subjected to micro-shocks in diamond wire-cutting, so that there are many tiny cracks in the finished square silicon core that are difficult to detect with the naked eye. The instantaneous impact on the cracks is large, which greatly increases the number of fractures or collapses during the growth of silicon cores. In mild cases, the group of silicon cores cannot grow, and in severe cases, it will cause shutdown of the furnace.

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