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Pixel structure, array substrate and manufacturing method thereof

A technology of pixel structure and array substrate, applied in the fields of array substrate and its manufacture, pixel structure, can solve the problems of long conduction path of common electrode line 50, uneven signal liquid crystal panel, large signal delay, etc., and achieve uniform common voltage, The effect of increasing pixel aperture ratio and increasing storage capacitance

Active Publication Date: 2015-11-25
HEFEI BOE OPTOELECTRONICS TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The common electrode line 50 runs through the liquid crystal panel laterally, such as Figure 4 As shown, the common voltage signal is generally imported through the data ports (DataIC) at the left and right ends of the panel, so the conduction path of the common electrode line 50 is long, which easily causes a large signal delay, resulting in uneven common voltage signals in the liquid crystal panel And cause the Greenish defect of the LCD panel, resulting in the quality problem of the LCD panel display

Method used

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  • Pixel structure, array substrate and manufacturing method thereof
  • Pixel structure, array substrate and manufacturing method thereof
  • Pixel structure, array substrate and manufacturing method thereof

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Embodiment 1

[0068] Figure 5 It is a schematic plan view of the pixel structure of the a-Si thin film transistor array substrate according to Embodiment 1 of the present invention, as shown in Figure 5 As shown, the common electrodes of the pixel structure in this embodiment include a first common electrode 5 and a second common electrode 6, the first common electrode 5 is formed by the metal layer used to form the gate scanning line 2, and includes a first electrode The strip 51 and the first electrode strip 52 are in the shape of an L, and are on the same layer as the grid scanning line 2 but are not connected, and the first electrode strip 51 is parallel to the grid scanning line 2; the second common electrode 6 is used for The metal layer forming the data electrode 3 is formed, including the second electrode strip, which is in the same layer as the data electrode 3 but not connected, and the second electrode strip is parallel to the data electrode 3 . The first common electrode 5 an...

Embodiment 2

[0078] Figure 7 It is a schematic plan view of the pixel structure of the oxide thin film transistor array substrate according to Embodiment 2 of the present invention, as shown in Figure 7 as shown,

[0079] The common electrodes of the pixel structure in this embodiment include a first common electrode 5 and a second common electrode 6. The first common electrode 5 is formed by the metal layer used to form the gate scanning line 2, and includes a first electrode strip 51 and a second common electrode 6. The first electrode strip 52 is L-shaped and is on the same layer as the gate scanning line 2 but not connected, and its first electrode strip 51 is parallel to the gate scanning line 2; the second common electrode 6 is used to form a data electrode 3, including the second electrode strip, which is on the same layer as the data electrode 3 but not connected, and the second electrode strip is parallel to the data electrode 3. The first common electrode 5 and the second com...

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Abstract

The invention discloses a pixel structure, an array substrate and a manufacture method of the array substrate. A public electrode of the pixel structure comprises a first public electrode and a second public electrode. The first public electrode is in the same layer with a grid scanning line but not connected with the grid scanning line. The second public electrode is in the same layer with a data electrode layer but not connected with the data electrode layer. The array substrate utilizes the pixel structure. The invention further provides the manufacture method of the array substrate with the pixel structure. The problems that in the prior art, in order to increase storage capacitance and improve stability of images, an opening rate needs to be reduced and the like are solved, and a poor phenomenon of Greenish of a liquid crystal display panel in the prior art due to the fact that public voltage in the crystal display panel is uneven is simultaneously solved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a pixel structure, an array substrate and a manufacturing method thereof. Background technique [0002] Domestic liquid crystal display technology has developed rapidly in recent years. The technology of thin film transistor liquid crystal display (TFT-LCD) is constantly developing and progressing. Consumers' demand for display equipment is also growing. The requirements are also getting higher and higher. The Greenish phenomenon of the liquid crystal display means that under a specific display screen of the liquid crystal display, the changes in the voltage of Vcom caused by the data pulse on the pixel voltage cannot cancel each other out, resulting in the phenomenon that the brightness of the green pixel increases and the color turns green. Among the evaluation parameters of liquid crystal display (LCD) display quality, the Greenish index is a very important parameter...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1362G02F1/1368G02F1/1343H01L27/12H01L21/77
Inventor 曾勉金在光涂志中尹傛俊
Owner HEFEI BOE OPTOELECTRONICS TECH
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