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Pinch-off control of gate edge dislocation

A region and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve problems that cannot be fully satisfied

Active Publication Date: 2013-06-19
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although existing methods for forming stressor regions of IC devices have generally met their intended purpose, these methods still cannot fully satisfy all aspects.

Method used

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  • Pinch-off control of gate edge dislocation
  • Pinch-off control of gate edge dislocation
  • Pinch-off control of gate edge dislocation

Examples

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Embodiment Construction

[0034] The following disclosure provides a number of different embodiments or examples for implementing different features of the present invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are in direct contact, and may also include that other components may be formed between the first component and the second component An embodiment such that the first part and the second part are not in direct contact. Additionally, the present invention may repeat reference symbols and / or characters in multiple instances. This repetition is for simplicity and clarity, and does not in itself indicate a relationship between the various embodiments and / or configurations descr...

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Abstract

The embodiments of processes and structures described provide mechanisms for improving the mobility of carriers. A dislocation is formed in a source or drain region between gate structures or between a gate structure and an isolation structure by first amortizing the source or drain region and then recrystallizing the region by using an annealing process with a low pre-heat temperature. A doped epitaxial material may be formed over the recrystallized region. The dislocation and the strain created by the doped epitaxial material in the source or drain region help increase carrier mobility.

Description

[0001] Cross References to Related Applications [0002] This disclosure is related to the following two U.S. patent applications, the entire disclosures of which are incorporated herein by reference: U.S. Patent Application No. 13 / 177,309, "A Semiconductor Device with a Dislocation Structure and Method of Forming the Same," and U.S. Patent Application No. 13 / 029,378, "Integrated Circuits and Fabrication Methods Thereof," filed February 17, 2011. This application also relates to the No. __ (Agency No. TSMC2011-0492) U.S. Patent Application "Mechanisms for Forming Strssor Regions of a Semiconductor Device" filed on the same date as this application, the entire disclosure of which is incorporated herein by reference. technical field [0003] The present invention relates to the field of semiconductors, and more specifically, the present invention relates to pinch-off control of gate edge dislocations. Background technique [0004] The semiconductor integrated circuit (IC) ind...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8238H01L29/32H01L27/092
CPCH01L29/66636H01L21/26506H01L21/2658H01L21/26593H01L21/268H01L21/324H01L21/823412H01L21/823425H01L21/823807H01L21/823814H01L29/32H01L29/6653H01L29/6659H01L29/7834H01L29/7847H01L29/7848
Inventor 蔡俊雄王参群
Owner TAIWAN SEMICON MFG CO LTD