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High-brightness light-emitting diode of step structure

A technology of light-emitting diodes and steps, applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as strong polarization effects

Active Publication Date: 2013-06-26
溧阳市高新技术创业中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The structure of the more common GaN-based light-emitting diodes has a GaN buffer layer, an n-type doped GaN layer, an InGaN / GaN multiple quantum well, a p-type doped AlGaN layer, and a p-type doped GaN layer on a sapphire substrate. layer, n-type ohmic contact layer, and a p-type ohmic contact layer under the substrate. This structure has the following obvious disadvantages: since the wurtzite-structured GaN is always perpendicular to the substrate along the [0001] or [000-1] direction Bottom growth, and these two directions are exactly the polar axis directions, so GaN-based materials will show strong lattice polarization, which leads to a strong polarization effect in the InGaN / GaN multi-quantum well region

Method used

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  • High-brightness light-emitting diode of step structure
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Embodiment 1

[0015] see Figure 1-3 , the structure of the light-emitting diode proposed by the present invention is: on the sapphire substrate 2, there is a low-temperature buffer layer 3, n-type doped Al 0.05 In 0.05 Ga 0.9 N layer 4, alternately formed superlattice structure of n-Al 0.05 In 0.05 Ga 0.9 N / n-AI 0.05 In 0.05 Ga 0.9 P multiquantum well layer 5, p-type doped AlGaN layer 6, p-type doped In 0.05 Ga 0.95 N layer 7, p-In of alternately formed superlattice structure 0.1 Ga 0.95 N / p-In 0.1 Ga 0.95 P multi-quantum well layer 8, the first transparent metal layer 9 and the p-type electrode 10, wherein the n-type doped Al 0.05 In 0.05 Ga 0.9 There is a second transparent metal layer 11 and an n-electrode 1 on the N layer 4 .

[0016] Among them, the alternately formed n-Al 0.05 In 0.05 Ga 0.9 N / n-AI 0.05 In 0.05 Ga 0.9 The specific structure of the P multi-quantum well layer 5 is: first form n-Al 0.05 In 0.05 Ga 0.9 N MQW layer 501, and then in the n-Al 0.05 ...

Embodiment 2

[0020] The preferred embodiment of the present invention is introduced below, which is the structure with the best brightness among the light emitting diode structures proposed by the present invention.

[0021] see Figure 1-3 , the structure of the light-emitting diode proposed by the present invention is: on the sapphire substrate 2, there is a low-temperature buffer layer 3, n-type doped Al 0.05 In 0.05 Ga 0.9 N layer 4, alternately formed superlattice structure of n-Al 0.05 In 0.05 Ga 0.9 N / n-AI 0.05 In 0.05 Ga 0.9 P multiquantum well layer 5, p-type doped AlGaN layer 6, p-type doped In 0.05 Ga 0.95 N layer 7, p-In of alternately formed superlattice structure 0.1 Ga 0.95 N / p-In 0.1 Ga 0.95 P multi-quantum well layer 8, the first transparent metal layer 9 and the p-type electrode 10, wherein the n-type doped Al 0.05 In 0.05 Ga 0.9 There is a second transparent metal layer 11 and an n-electrode 1 on the N layer 4 .

[0022] Among them, the alternately forme...

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Abstract

The invention discloses a high-brightness light-emitting diode of a step structure. The structure of the high-brightness light-emitting diode comprises a sapphire substrate which is sequentially provided with a low-temperature buffer layer, an n-type doped Al0.05In0.05Ga0.9N layer, an alternate formed superlattice n-Al0.05In0.05Ga0.9N / n-Al0.05In0.05Ga0.9P multi-quantum well layer, a p-type doped AlGaN layer, a p-type doped In0.05Ga0.95N layer, an alternate formed superlattice p- In0.05Ga0.95N / p- In0.05Ga0.95P multi-quantum well layer, a first transparent metal layer and a p-type electrode. A second transparent metal layer and an n electrode are arranged on the n-type doped Al0.05In0.05Ga0.9N layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a high-brightness light-emitting diode with a stepped structure. Background technique [0002] Semiconductor light-emitting diodes are increasingly widely used, especially in the trend of replacing incandescent and fluorescent lamps in lighting, but they still face some technical problems, especially the relatively low light extraction efficiency. This leads to defects such as insufficient brightness of the light-emitting diodes. [0003] In recent years, in order to improve the brightness of light-emitting diodes, light-emitting diodes with vertical structures have been developed. Compared with light-emitting diodes with formal structures, light-emitting diodes with vertical structures have many advantages. The two electrodes of the vertical light-emitting diode are located on both sides of the light-emitting diode, and almost all the current flows vertically through the...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/32
Inventor 童小春
Owner 溧阳市高新技术创业中心