A MOS device with broadband characteristics based on teo2/pentacene composite

Abstract

The invention discloses a metal oxide semiconductor (MOS) apparatus based on a TeO2 / pentacene composite material and having a broadband characteristic. The apparatus comprises a source, a grid and a drain, wherein from bottom to top, the MOS apparatus has the following structure: glass is taken as a substrate and indium tin oxide (ITO) is taken as the grid, a dual-layer material structure of polyvinyl alcohol (PVA) and polymethyl methacrylate (PMMA) is used as an insulating layer, and a TeO2 / pentacene composite material is taken as an active layer; both the source and the drain adopt gold as electrodes, and the source and the drain are in interdigital structures. The apparatus disclosed by the invention is an active MOS apparatus which controls conductivity of solid material through an electric field. The apparatus represents a remarkable broadband characteristic, and frequency band is comparatively wide even on an amplitude-frequency characteristic; so that the apparatus disclosed by the invention has a good application prospect in sensors, high-frequency electronic circuits, large-scale integration circuits and active display fields.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a MOS device with broadband characteristics. Background technique [0002] In the prior art, a MOS device includes a source, a gate, and a drain. The main structure of a traditional MOS device is to use a silicon wafer as a substrate, and oxidize the middle part of the silicon wafer to produce SiO 2 The oxide layer is used as an insulating layer, and then a metal electrode is grown on the insulating layer by thermal evaporation as a gate electrode. The source and drain electrodes are also longer than the original silicon that has not been oxidized by thermal evaporation. Generally, the process involved in this type of MOS device is relatively complicated, especially the cost of the doping step is relatively high. In addition, the physical size of such devices can only be limited within a certain range. More importantly, such devices have great limitations in the operation of high-freq...

AI Technical Summary

Problems solved by technology

Generally, the process involved in this type of MOS device is relatively complicated, especially the cost of the doping step is relatively high

In addition, the physical size of such devices can only be limited within a certain range

More importantly, such devices have great limitations in the operation of high-frequency circuits, and their amplitude-frequency characteristics are poor

At present, in order to solve the defects of devices working on high-frequency circuits, most of the methods are to use heavy doping process or change the types of impurities, but this method will also cause the reduction of other parameters of the device, and the preparation process is relatively complicated, and there are still some problems. inadequacies of

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