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Detection circuit and detection method of electrostatic discharge protector

A technology for electrostatic discharge protection and detection circuits, which is applied in the direction of measuring devices, measuring electricity, measuring electrical variables, etc.

Active Publication Date: 2013-07-03
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, there is no effective test circuit and test method in the prior art to judge whether each electrostatic discharge protection device is effective

Method used

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  • Detection circuit and detection method of electrostatic discharge protector
  • Detection circuit and detection method of electrostatic discharge protector
  • Detection circuit and detection method of electrostatic discharge protector

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0035] Please refer to figure 2, is a schematic structural diagram of a detection circuit of an electrostatic discharge protection device according to the first embodiment of the present invention, including: a monitoring transistor 20 and an electrostatic discharge protection device 30, wherein the first terminal 10 of the electrostatic discharge protection device 30 is connected to the One terminal of the monitoring transistor 20 is connected, and the second terminal 40 of the electrostatic discharge protection device 30 is connected to the other terminal of the monitoring transistor 20 . The monitoring transistor 20 is used to simulate the actual chip internal circuit or external circuit, and judge whether the actual chip internal circuit or external circuit will be damaged by electrostatic discharge under the protection of the electrostatic discharge protection device 30 . The inventor also proposes a detection method, comprising: inputting a test current at the first end...

no. 2 example

[0038] Please refer to image 3 , is a schematic structural diagram of a detection circuit of an electrostatic discharge protection device according to the second embodiment of the present invention, including: a diode 120, a monitoring transistor 130, and an electrostatic discharge protection device 140, wherein the electrostatic discharge protection device 140 has a first terminal and the second end, the first end of the electrostatic discharge protection device 140 is connected to the anode of the diode 120, the second end of the electrostatic discharge protection device 140 is connected to the source of the monitoring transistor 130, the diode 120 The negative pole is connected to the gate of the monitoring transistor 130, the connection end between the electrostatic discharge protection device 140 and the anode of the diode 120 is the first test terminal 110, and the connection end between the electrostatic discharge protection device 140 and the source of the monitoring t...

no. 3 example

[0051] Please refer to Image 6 , is a schematic structural diagram of a detection circuit of an electrostatic discharge protection device according to the third embodiment of the present invention, including: a diode 220, a monitoring transistor 230, and an electrostatic discharge protection device 240, wherein the electrostatic discharge protection device 240 has a first terminal and the second end, the first end of the electrostatic discharge protection device 240 is connected to the anode of the diode 220, the second end of the electrostatic discharge protection device 240 is connected to the source of the monitoring transistor 230, the diode 220 The negative pole is connected to the gate of the monitoring transistor 230, the connection end between the electrostatic discharge protection device 240 and the anode of the diode 220 is the first test terminal 210, and the connection end between the electrostatic discharge protection device 240 and the source of the monitoring tr...

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Abstract

Provided is a detection circuit and a detection method of an electrostatic discharge protector. The detection circuit of the electrostatic discharge protector comprises a diode, a monitoring transistor and the electrostatic discharge protector, wherein a first end of the electrostatic discharge protector is connected with a positive electrode of the diode, a second end of the electrostatic discharge protector is connected with a source electrode of the monitoring transistor, a negative electrode of the diode is connected with a grid electrode of the monitoring transistor, a connecting end of the electrostatic discharge protector and the positive electrode of the diode is a first test end, a connecting end of the electrostatic discharge protector and the source electrode of the monitoring transistor is a second test end, and a connecting end of the negative electrode of the diode and the grid electrode of the transistor is a third test end. After test current is imposed between the first test end and the second test end, and detection voltages are imposed on the third test end and the second test end, and therefore whether the electrostatic discharge protector is actually valid or not can be judged.

Description

technical field [0001] The invention relates to the field of circuit testing, in particular to a detection circuit and a detection method of an electrostatic discharge protection device. Background technique [0002] Electrostatic Discharge (ESD) has great damage to semiconductor devices. According to statistics, the annual losses caused by electrostatic discharge to semiconductor and electronic device manufacturing industries reach more than 20 billion US dollars. For this reason, the performance of the electrostatic discharge protection device used for anti-static becomes very important. [0003] The electrostatic discharge includes: charged device model (Charged Device Model, CDM) electrostatic discharge, human body model (Human Body Model, HBM) electrostatic discharge and mechanical discharge model (Machine Model, MM) electrostatic discharge. The electrostatic discharge of the component charge mode (CDM) mainly includes two types: (1) Chip-Level Charged Device Model (Ch...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/00
Inventor 甘正浩冯军宏
Owner SEMICON MFG INT (SHANGHAI) CORP