Dual DNW isolation structures for reducing RF noise on high voltage semiconductor devices

Abstract

An isolation structure in a semiconductor device absorbs electronic noise and prevents substrate leakage currents from reaching other devices and signals. The isolation structure provides dual deep N-well ("DNW") isolation structures surrounding an RF device or other source of electronic noise. The DNW isolation structures extend into the substrate at a depth of at least about 2.5 [mu]m and may be coupled to VDD. P+ guard rings are also provided in some embodiments and are provided inside, outside or between the dual DNW isolation structures. The invention also provides the dual DNW isolation structures for reducing RF noise on high voltage semiconductor devices.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly, to deep N-well isolation structures for reducing electronic noise. Background technique [0002] RF (Radio Frequency) semiconductor devices operate at high frequency bands and generate electronic noise that may adversely affect other elements of a circuit including the noise-generating device, other devices located over a substrate including the circuit, and forming other devices on top of other components in close proximity to the noise. This penalty is true for the various elements that are combined to form a package or other assembly, including RF devices, as well as for system-on-chip (SoC) technology. Especially for high voltage applications such as HVMOS (High Voltage Metal Oxide Semiconductor) devices do have adverse effects on other components. The noise source may be a device formed over the substrate, and the noise source operates at high (RF) frequency or high v...

AI Technical Summary

Problems solved by technology

Substrate noise coupling is an effect of concern because it can adversely affect the operation of various other devices

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