Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of metal nanoparticles doped graphene

A technology of metal nanoparticles and graphene, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of unsatisfactory graphene quality and so on

Active Publication Date: 2013-07-24
WUXI HUICHENG GRAPHITE ALKENE TECH APPL CO LTD
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The problem solved by the present invention is to provide a method for preparing graphene doped with metal nanoparticles, which avoids the problem of unsatisfactory graphene quality caused by the damage of existing chemical doping to graphene structure by means of physical doping

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of metal nanoparticles doped graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The inventors of the present invention found that the existing chemical doping process, especially the substitutional doping, seriously damages the graphene structure, resulting in a higher defect density and affecting the mobility. The reason is that the doping atoms need to replace the carbon atoms in the hexagonal ring of graphene. Since the mass, density, electricity and size of carbon atoms and replacement atoms are completely different, the complete two-dimensional honeycomb structure of graphene is directly destroyed. .

[0018] In view of the above problems, the inventor of the present invention proposes a technical solution, specifically as figure 1 Shown: a method for preparing graphene doped with metal nanoparticles, comprising the following steps: step S11: placing the graphene film with a metal substrate in a vacuum coating machine, and evacuating to 0.001Pa; step S12: heating The graphene film is brought to 100°C and kept for 30 minutes; step S13: cool th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of metal nanoparticles doped graphene. The preparation method disclosed by the invention comprises the following steps of: placing a graphene film with a metal substrate in a vacuum film-plating machine and vacuumizing till 0.001Pa; heating the graphene film to 100 DEG C and keeping for 30 minutes; cooling the graphene film to normal temperature and heating a metal target placed in a crucible for carrying out metal deposition on the surface of the graphene film; and filling argon and breaking vacuum when the metal deposition thickness under monitoring reaches the required thickness to acquire a metal nanoparticles doped graphene film. By adopting a method of evaporating in vacuum in the preparation method disclosed by the invention, the metal nanoparticles are evaporated on the surface of the graphene film and electron exchange is carried out between the metal nanoparticles and the graphene film by utilizing a work function difference between the graphene and the metal nanoparticles, so that a Fermi surface of the graphene film is changed, and regulation and control between carrier concentration and polarity of the graphene film are realized.

Description

technical field [0001] The invention relates to a graphene preparation process, in particular to a method for preparing graphene doped with metal nanoparticles. Background technique [0002] Graphene has extremely high carrier mobility and high light transmittance physical properties. It can be used as a conductive transparent electrode and has important application prospects in the fields of flat panel display touch control and solar cells. At present, the methods for preparing high-quality graphene mainly include tape stripping method, silicon carbide or metal surface epitaxial growth method, and chemical vapor deposition (CVD). The first two methods have low efficiency and are not suitable for large-scale preparation; Graphene can be made to any size (determined by the substrate material). However, single-layer graphene is a zero-bandgap semiconductor, and due to its low carrier concentration, intrinsic graphene does not exhibit good electrical conductivity. Whether it ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/18C23C14/24
Inventor 刘长江连榕
Owner WUXI HUICHENG GRAPHITE ALKENE TECH APPL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com