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A kind of manufacturing method of palladium-plated silver-plated double-coated bonding copper wire

A technology for bonding copper wire and manufacturing method, which is applied in the direction of semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc.

Inactive Publication Date: 2015-11-25
溧阳市虹翔机械制造有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a double-coated bonding copper wire and its manufacturing method to overcome the production cost of the existing gold-plated bonding copper wire Defects of high, poor ductility of silver-plated bonding copper wire

Method used

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  • A kind of manufacturing method of palladium-plated silver-plated double-coated bonding copper wire

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Embodiment

[0015] (2) After the copper core is roughly drawn to obtain a copper wire with a diameter of about 3-4 mm, the copper wire is annealed at about 450-500 degrees Celsius, and the annealing time is about 20-60 minutes , water cooling after annealing;

[0016] (3) electroplating pure palladium conductive layer: electroplating 3.3~4.2wt% pure palladium on the surface of the copper core after annealing to form a pure palladium conductive layer, the purity of the pure palladium is greater than 99.99%;

[0017] (4) The first fine drawing: the copper wire plated with pure palladium conductive layer after step (3) is finely drawn into a palladium-coated copper wire with a diameter of about 1-2mm;

[0018] (5) The first thermal annealing: perform thermal annealing on the palladium-coated copper wire that has completed step (4), wherein the thermal annealing temperature is about 450-500 degrees Celsius, and the time is about 20-60 minutes;

[0019] (6) electroplating pure silver conducti...

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Abstract

The invention discloses a double-plating bonding copper wire of a three-layer structure. The innermost layer of the copper wire is a copper core formed due to the fact that trace metal elements are added to high-purity copper, a pure-palladium conductive layer plates the surface of the copper core, and a pure-silver conductive layer plates the surface of the pure-palladium conductive layer. The trace metal elements include tin, magnesium and aluminum.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit chip packaging, and in particular relates to a method for manufacturing a double-coated copper wire for semiconductor integrated circuit chip bonding. Background technique [0002] Although the chip obtained after the semiconductor integrated circuit is manufactured has a specific function, it must be connected with external electronic components to realize this function. The semiconductor integrated circuit chip needs to go through a bonding process with the package body, and finally get the chip package, so that it can be connected to external electronic components through the package pins. In the bonding process of the chip and the package, the bonding pads on the chip are electrically connected to the pins of the package through bonding wires. Therefore, the bonding wire is an essential material to realize the function of the chip. In the prior art, most bonding wires are made...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48C25D5/10C25D7/06
CPCH01L24/43H01L24/45H01L2224/43H01L2224/45015H01L2224/45147H01L2224/45572H01L2224/45639H01L2224/45664H01L2924/00014H01L2924/01047H01L2224/4321H01L2224/43848H01L2224/45H01L2924/00011H01L2924/0105H01L2924/01012H01L2924/01013H01L2924/013H01L2924/00H01L2224/48H01L2924/20111H01L2924/00012H01L2924/01204H01L2924/01033
Inventor 吕燕翔居勤坤史仁龙万传友彭芳美周国忠
Owner 溧阳市虹翔机械制造有限公司
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