Semiconductor thermoelectric module

Abstract

The invention provides a semiconductor thermoelectric module (TEM). The semiconductor thermoelectric module comprises a hot-end substrate and a cold-end substrate, wherein a P-N type couple pair and flow deflection strips are arranged between the hot-end substrate and the cold-end substrate, and the P-N type couple pair is welded with the flow deflection strips; and the conductive heat resistance of the hot-end substrate is lower than that of the cold-end substrate. According to the semiconductor thermoelectric module, the technical scheme simultaneously considering the cost and the performance of the TEM is provided, and the original non-directional TEM with a cold-hot symmetrical structure is designed into an asymmetric structure, so that the refrigeratory capacity and the conversion efficiency of a cold end of the TEM are improved, meanwhile, the relatively low cost is maintained, and the cost performance of the TEM is greatly improved.

Description

【Technical field】 [0001] The invention relates to the field of refrigeration and heating, in particular to a new semiconductor thermoelectric module structure. 【Background technique】 [0002] The semiconductor thermoelectric module (Thermoelectric Module, TEM for short) used for cooling / heating functions uses the Peltier effect of semiconductor thermoelectric materials. When a DC voltage is supplied to its input terminal, it will generate a cold at both ends of the TEM. Thermal phenomena at one end realize cooling and heating of objects. At present, a conventional TEM is composed of n PN-type galvanic couple pairs (legs), such as figure 1 shown. The electrical series connection and thermal parallel connection of the PN type leg are realized through the cold and hot end substrates. The TEM structure adopts a symmetrical sandwich structure. From the internal structure of a P-N galvanic couple, it can be seen that the comprehensive thermal resistance between the two ends of ...

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Problems solved by technology

Refrigeration coefficient (cop) value = Qc / Pi; then Q h =(1+1 / cop)Qc;, so Q h >Qc, generally coph The bigger the difference between the value and the Qc value, for example cop=0.25, then the Q h =5Qc, that is, the heat generated by the hot end of the TEM is 5 times that of the cold end, which is far greater than the cold output. For example, if a TEM with a symmetrical structure is used, the structure of the hot and cold ends of the TEM is the same and the temperature difference between the hot and cold ends is different. Larger means that the thermal conductivity of the material does not change much, then the thermal resistance R from the cold and hot junction surface of the leg to the outer surface of the corresponding cold and hot substrate cT , R hT The same, so in the TEM, there is a large difference in the temperature drop from the junction surface at both ends of the leg to the end surface of the substrate, which seriously affects the heat transfer at the hot end of the leg, which in turn affects the generation of cold energy, reducing the conversion efficiency of the TEM

If both the cold and hot ends are made of high thermal conductivity materials, the cooling capacity generated by the cold end will be small, resulting in unreasonable design and high cost, which will reduce the cost performance of TEM

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