Unlock instant, AI-driven research and patent intelligence for your innovation.

Substrate-topography-aware lithography modeling

A substrate and mask technology, applied in the field of lithography modeling, can solve problems such as complex tasks

Active Publication Date: 2013-08-14
ASML NETHERLANDS BV
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because many features may exist in this neighborhood, the task of optimizing OPC modification becomes more and more complex as more aggressive methods are added

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate-topography-aware lithography modeling
  • Substrate-topography-aware lithography modeling
  • Substrate-topography-aware lithography modeling

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] Embodiments will be described below with reference to the accompanying drawings, which are illustrative examples of the invention. It is to be noted that the following figures and examples are not meant to limit the scope of the invention to a single embodiment, but other embodiments are possible by substitution of some or all of the described or illustrated elements. Also, where known components are used to partially or completely apply specific elements described herein, only those of the known components that are necessary for understanding the present invention will be described, and a detailed description of the remaining portions of these known components will be are omitted so as not to obscure the invention. As will be apparent to those skilled in the art, if not specifically stated herein, embodiments described as being implemented in software should not be limited thereto, but may include embodiments implemented in hardware, or implementations implemented in a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Described herein is a method for simulating an image formed within a resist layer on a substrate resulting from an incident radiation, the substrate having a first feature and a second feature underlying the resist layer, the method comprising: simulating a first partial image using interaction of the incident radiation and the first feature without using interaction of the incident radiation and the second feature; simulating a second partial image using the interaction of the incident radiation and of the second feature without using the interaction of the incident radiation and the first feature; computing the image formed within the resist layer from the first partial image, and the second partial image; wherein the interaction of the incident radiation and the first feature is different from the interaction of the incident radiation and the second feature.

Description

technical field [0001] The invention relates to a photolithography modeling method with known substrate topology. Background technique [0002] For example, lithographic projection equipment may be used in the manufacture of integrated circuits (ICs). In this case, the mask may contain a circuit pattern corresponding to a single layer of the IC, and this pattern is imaged onto a target on a substrate (e.g., a silicon wafer) that has been coated with a layer of radiation-sensitive material (resist) portion (eg, including one or more dies). Typically, a single wafer will contain an entire network of adjacent target portions that are successively illuminated one at a time by the projection system of a lithographic projection apparatus. In one type of lithographic projection apparatus, each target portion is irradiated by exposing the entire mask pattern onto the target portion at once; this type of apparatus is commonly referred to as a wafer stepper. In an alternative devic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F1/36G03F7/20G06F17/50
CPCG06F17/5009G03F7/00G03F1/36G03F7/705G03F7/70625G03F7/70666G06F30/20H01L21/0274
Inventor 兰崧
Owner ASML NETHERLANDS BV