Electrostatic discharge protection structure and semiconductor device

An electrostatic discharge protection and electrostatic discharge wire technology, applied in the field of electrostatic discharge protection structures and semiconductor equipment, can solve problems such as reducing product reliability, degrading components, and increasing maintenance costs, achieving a wide range of applicable locations, small parasitic capacitance, simple structure

Active Publication Date: 2013-09-11
SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Electrostatic discharge (ESD, electrostatic discharge) will occur rapidly with extremely high intensity, break down semiconductor devices, or generate enough heat to melt semiconductor devices and semiconductor devices.

Method used

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  • Electrostatic discharge protection structure and semiconductor device
  • Electrostatic discharge protection structure and semiconductor device
  • Electrostatic discharge protection structure and semiconductor device

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0060] [Example 1]

[0061] image 3 It is a cross-sectional view of the electrostatic discharge protection structure in the first embodiment of the present invention, image 3 for the edge figure 1 Cross-sectional view of the ESD protection structure in the A-A' direction, combined with figure 1 and image 3 As shown, the electrostatic discharge protection structure is arranged between the electrostatic sensitive element 30 and the peripheral circuit 40, and the electrostatic discharge protection structure is also connected with the discharge bus; wherein the electrostatic discharge protection structure includes a first interconnection line 11, a passivation layer 12 and at least one electrostatic discharge wire 13, the first interconnection wire 11 is electrically connected to the electrostatic sensitive element 30 and the peripheral circuit 40, the electrostatic discharge wire 13 and the first interconnection wire 11 pass through the passivation layer 12 and the boundar...

Example Embodiment

[0066] [Example 2]

[0067] Figure 4 It is a cross-sectional view of the electrostatic discharge protection structure in the second embodiment of the present invention. combine Figure 4 , On the basis of the first embodiment, in this embodiment, the electrostatic discharge wire 13 and the first interconnection wire 11 are staggered in the longitudinal direction, and the staggered width d2 is greater than 0um and less than or equal to 2.5um, and the staggered width d2 Within this range, d2 can generate a breakdown effect in time when static electricity comes, thereby protecting the electrostatic sensitive components connected to the electrostatic discharge protection structure.

Example Embodiment

[0068] [Example 3]

[0069] Figure 5 It is a cross-sectional view of the electrostatic discharge protection structure in the third embodiment of the present invention. combine Figure 5, on the basis of the first embodiment, the plane where the longitudinal boundary of the electrostatic discharge wire 13 is located coincides with the plane where the longitudinal boundary of the first interconnection line 11 is located. Since the plane where the longitudinal boundary of the electrostatic discharge wire 13 is located coincides with the plane where the longitudinal boundary of the first interconnection wire 11 is located, the electrostatic discharge wire 13 is closer to the first interconnection wire than the first and second embodiments. An electrostatic discharge path L can be formed between the top corner of the connection line 11 and the adjacent top corner of the first interconnection line 11 . 12 is the smallest under the same thickness, so it is more suitable for prote...

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Abstract

The invention provides an electrostatic discharge protection structure which is arranged between an electrostatic sensitive element and a peripheral circuit. The electrostatic discharge protection structure is further connected with a discharge bus and comprises a first interconnecting wire, a passivation layer and at least one electrostatic discharge wire, wherein the first interconnecting wire is electronically connected with the electrostatic sensitive element and the peripheral circuit, the electrostatic discharge wire is connected with the discharge bus and insulated from the first interconnecting wire through the passivation layer, and at least one electrostatic discharge route is arranged between the electrostatic discharge wire and the first interconnecting wire. The electrostatic discharge protection structure has the advantages of being simple in structure, good in electrostatic protection effect, free of parasitic current, small in parasitic capacitance, low in noise and the like.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to an electrostatic discharge protection structure and semiconductor equipment. Background technique [0002] With the continuous development of liquid crystal television (LCD) technology, more and more electronic products use liquid crystal display panels as display panels. Thin film field effect transistor liquid crystal display (TFT-LCD) technology is the mainstream technology currently used. TFT-LCD The driver chip is a bridge connecting the LCD screen and the control circuit. In addition, a TFT (Thin Film Transistor, Thin Film Field Effect Transistor) process is commonly used in the common X-ray sensor panel (X-ray sensor panel). [0003] Electrostatic discharge (ESD, electrostatic discharge) will occur rapidly with extremely high intensity, break down semiconductor devices, or generate enough heat to melt semiconductor devices and semiconductor devices. Downgr...

Claims

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Application Information

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IPC IPC(8): H01L27/02
Inventor 郑礼朋
Owner SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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