Electrostatic clamp and ion implantation system
A technology of ion implantation and electrostatic clamp, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve the problems of gas leakage rate, poor airtight combination, gas leakage, etc.
Active Publication Date: 2016-04-13
VARIAN SEMICON EQUIP ASSOC INC
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Problems solved by technology
Furthermore, dissimilar materials may not form intimate contacts at their joining interfaces, resulting in appreciable gas leakage along direction 22
For example, the pressure in the gap 18 may be tens of Torr or higher, while the pressure outside the electrostatic clamp 10 may be in the range of several millitorr or less, such a large pressure difference, and the interface 20 Poor gas-tight bonding at , resulting in a high rate of gas leakage into the substrate processing chamber 24
[0006] like Figure 1b As shown, with gas leakage, the gas pressure across gap 18 may change, resulting in temperature non-uniformity across electrostatic clamp 10
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[0018] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the figures, like reference numerals refer to like elements throughout.
[0019] In various embodiments, heated electrostatic clamps may be provided in process equipment including ion implantation systems, plasma etchers, and deposition systems, among others. Please refer to Figure 5 , is a block diagram of an ion implanter 100 including an ion source 102 . The power supply 101 supplies the required energy to the ion source 102 for generating species-specific ions. Generated ions are extracte...
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An electrostatic forceps and ion implantation system. The electrostatic clamp includes a heating assembly for heating the substrate, the heating assembly having a first surface disposed toward the substrate and a second surface opposite the first surface. The base is arranged to be attached to at least a portion of the second surface of the heating element. The joined base and the heating assembly together define an internal gap between the first portion of the heating assembly and the base. The outer gap is arranged in a manner concentric with the inner gap between the second part of the heating element and the susceptor, and the inner gap and the inner gap are formed by the first sealing surface formed between the second surface of the heating element and the susceptor. The outer gaps are isolated from each other.
Description
technical field [0001] The present invention relates to substrate holders, and more particularly to controlling leakage in electrostatic clamp systems. Background technique [0002] Substrate holders, such as electrostatic clamps, are widely used in devices that impart heat to a substrate, where the substrate may require controlled transfer of heat into or out of the substrate holder to maintain proper substrate retention. temperature. Heat can be imparted by the process itself or by carefully heating the substrate. In resistively heated electrostatic clamps, to aid heat transfer, a gas can be provided between the heating element and the cooling base. Since the heating element and the base may each comprise different materials (e.g., ceramic and metal), it may be desirable to avoid bonding the two components together when heating the element to avoid excessive thermal mismatch (mismatch) strains ( strain). If the susceptor is not attached to the heating element, it may b...
Claims
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IPC IPC(8): H01L21/683H01L21/67
CPCH01J37/317H01J37/3171H01L21/67H01L21/67011H01L21/687H01L21/68714H01L21/68785H01L21/67109H01L21/6831H01L21/683
Inventor 提摩太·J·米勒理查·S·默卡朱利安·G·布雷克
Owner VARIAN SEMICON EQUIP ASSOC INC