A superjunction mosfet with ion self-alignment implantation and its manufacturing method

Abstract

The invention discloses a super-junction MOSFET with ions injected in a self-aligned mode and a manufacturing method of the super-junction MOSFET. In the technology of manufacturing MOS pipes, when an oxide layer rather than a photo-etching layer is used as a blocking layer, the ions injecting effect of the oxide layer is better, and the feature size of the super-junction MOSFET after the super-junction MOSFET is etched cannot be influenced by a side wall. Meanwhile, the processing steps of photo-etching when the ions are injected are reduced, therefore, production cost can be reduced, depreciation speed of a photo-etching machine is retarded, time of the whole technology process can be also reduced, and good economic benefits are brought to enterprises.

Description

technical field [0001] The invention relates to a structure and a manufacturing method of a semiconductor device, in particular to an ion self-aligned implanted superjunction MOSFET and a manufacturing method. Background technique [0002] Metal-oxide-semiconductor field-effect transistors (MOSFETs) are currently the most commonly used transistor type. In fact, all large-scale integrated circuits (microprocessors, memories, digital electronics systems, etc.) are based on the use of MOS technology superior. The process of manufacturing MOS tubes is very complicated. Most semiconductor processes mainly occur within a few microns of the top layer of the silicon wafer, so the materials above the silicon are all part of the layered structure required to interconnect various devices on the chip. In order to increase the number of layers of metal and The insulating layer, the process flow requires the silicon wafer to be cycled through different process steps. [0003] A conventi...

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Problems solved by technology

[0004] "Semiconductor Optoelectronics" published an article entitled "The Effect of Photoresist Slope on the Feature Size of Patterns after Ion Implantation" in December 2008, Volume 29, Issue 6, which pointed out that in the photolithography process of CCD, photoresist The steepness of the transition of the resist from the exposed area to the non-exposed area is not ideal at 90 degrees. This is caused by the exposure wavelength, the dose of the light source, and the type of photoresist. graphics size may affect the

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